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ZXMP6A17GQ - 60V P-Ch MOSFET, 3A, SOT-223 | Diodes Inc

The Diodes Incorporated ZXMP6A17GQ is a 60V P-Channel Enhancement Mode MOSFET rated for 3A continuous drain current and 2W power dissipation in a SOT-223-3 (TO-261-4) surface-mount package. It combines a 125 mΩ typical on-resistance at VGS = -10V with a -4.3A pulsed current rating, and 190 mΩ typical RDS(on) at VGS = -4.5V delivering -3.5A, enabling low-loss high-side switching without bulky gate drivers. What is a P-Channel Enhancement Mode MOSFET? It is a specific type of metal-oxide-semiconductor field-effect transistor in which the conducting channel is formed by applying a negative gate-to-source voltage below the device threshold, allowing conventional positive-rail high-side switching when paired with N-Channel parts. As an enhancement-mode device it is normally off at VGS = 0V, sits within the MOSFET -> FET -> discrete semiconductor -> power management IC taxonomy, and is typically chosen for reverse-battery protection, load switching, and synchronous-rectifier low-side positions where ground-referenced control is preferred. Key features include fast switching speed for high-frequency PWM operation, low gate drive allowing direct logic-level control from 3.3V or 5V microcontrollers, low input capacitance (Ciss) minimising drive losses, and a Green / RoHS-compliant lead-free finish. The device is halogen- and antimony-free, qualifying it for modern environmental standards and high-reliability build requirements. Internally the part uses Diodes' proprietary TrenchFET generation, which shrinks the on-resistance per unit silicon area by orienting the conduction cells vertically through the epitaxial layer. The result is a 4-pin SOT-223 footprint with the tab as an additional thermal pad (pin 4), giving much lower RθJA than a 3-pin SOT-223 part while keeping the same PCB land pattern. Typical applications include automotive load switching and reverse-battery protection, DC-DC converter synchronous-rectifier low-side switches, battery management charge/discharge paths in power tools, motor-drive H-bridges, and hot-swap / in-rush current limiters in industrial 24V buses. The -Q suffix confirms IATF 16949 build, AEC-Q101 qualification, and PPAP capability. When designing with the ZXMP6A17GQ, place the tab-to-PCB copper pour area at least 100 mm² to keep RθJA below its rated value at 2W. Source the gate resistor at 10Ω-100Ω to dampen the high dv/dt produced by the low Ciss and use a pull-down of 10kΩ-100kΩ to keep the device off during controller reset. This page aggregates verified distributor pricing, AEC-Q101-aware drop-in alternatives, and application-grade design notes beyond the manufacturer datasheet summary to accelerate your selection.