ZXMP6A17GQ - 60V P-Ch MOSFET, 3A, SOT-223 | Diodes Inc
Teilenummer: ZXMP6A17GQ ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.54 | $5,40 |
| 100 | $0.41 | $41,00 |
| 500 | $0.33 | $165,00 |
| 1.000 | $0.26 | $260,00 |
| 3.000 | $0.21 | $630,00 |
ZXMP6A17GQ Übersicht
What is a P-Channel Enhancement Mode MOSFET? It is a specific type of metal-oxide-semiconductor field-effect transistor in which the conducting channel is formed by applying a negative gate-to-source voltage below the device threshold, allowing conventional positive-rail high-side switching when paired with N-Channel parts. As an enhancement-mode device it is normally off at VGS = 0V, sits within the MOSFET -> FET -> discrete semiconductor -> power management IC taxonomy, and is typically chosen for reverse-battery protection, load switching, and synchronous-rectifier low-side positions where ground-referenced control is preferred.
Key features include fast switching speed for high-frequency PWM operation, low gate drive allowing direct logic-level control from 3.3V or 5V microcontrollers, low input capacitance (Ciss) minimising drive losses, and a Green / RoHS-compliant lead-free finish. The device is halogen- and antimony-free, qualifying it for modern environmental standards and high-reliability build requirements.
Internally the part uses Diodes' proprietary TrenchFET generation, which shrinks the on-resistance per unit silicon area by orienting the conduction cells vertically through the epitaxial layer. The result is a 4-pin SOT-223 footprint with the tab as an additional thermal pad (pin 4), giving much lower RθJA than a 3-pin SOT-223 part while keeping the same PCB land pattern.
Typical applications include automotive load switching and reverse-battery protection, DC-DC converter synchronous-rectifier low-side switches, battery management charge/discharge paths in power tools, motor-drive H-bridges, and hot-swap / in-rush current limiters in industrial 24V buses. The -Q suffix confirms IATF 16949 build, AEC-Q101 qualification, and PPAP capability.
When designing with the ZXMP6A17GQ, place the tab-to-PCB copper pour area at least 100 mm² to keep RθJA below its rated value at 2W. Source the gate resistor at 10Ω-100Ω to dampen the high dv/dt produced by the low Ciss and use a pull-down of 10kΩ-100kΩ to keep the device off during controller reset.
This page aggregates verified distributor pricing, AEC-Q101-aware drop-in alternatives, and application-grade design notes beyond the manufacturer datasheet summary to accelerate your selection.
Drop-in-Alternativen für ZXMP6A17GQ – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
ZXMP6A17G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ZXMP6A17GQTA
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ZXMP6A17GTA
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ZXMP6A17GFQ-7
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
DMP3098L-7
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
NTR4101PT1G
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI2333DDS-T1-GE3
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ZXMP6A17GQ Grenzwerte & elektrische Eigenschaften
| Polarity / Channel Type | P-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID, TA=+25°C) | -3 A |
| Pulsed Drain Current (IDM) | -4.3 A (pulsed) |
| On-Resistance RDS(on) @ VGS=-10V | 125 mΩ (typ) |
| On-Resistance RDS(on) @ VGS=-4.5V | 190 mΩ (typ) at -3.5A |
| Power Dissipation (PD, TA=+25°C) | 2 W |
| Gehäuse | SOT-223-3 (TO-261-4) surface mount |
| Configuration | Single MOSFET, 4 pins (G, D, S, tab=D) |
| Montageart | Surface Mount |
| Switching Characteristic | Fast switching speed, low input capacitance |
| Gate Drive | Low (logic-level compatible) |
| Automotive Qualification | AEC-Q101 qualified, PPAP capable, IATF 16949 facility |
| RoHS / Lead-Free | RoHS Compliant, lead-free finish |
| Halogen & Antimony | Halogen-free, Antimony-free (Green device) |
ZXMP6A17GQ Pin-Konfiguration
| Pin 1 | Gate — Gate control input; drives VGS negative to turn the P-Channel MOSFET on |
| Pin 2 | Drain (tab) — Drain terminal tied to the metal tab; main load-current path |
| Pin 3 | Source — Source terminal; typically tied to the load-side rail in high-side switching |
| Pin 4 | Drain (tab) — Drain pad on the underside tab; thermal pad and electrical drain tied together |
Sicherer Arbeitsbereich (DC, TA=+25°C)
Typische Anwendungen
ZXMP6A17GQ ist geeignet für 7 Anwendungs: Automotive Reverse-Battery Protection, DC-DC Converter Synchronous Rectifier, Power Tool Battery Management, LED Lighting Load Switch, Industrial 24V Bus Hot-Swap / In-Rush Limiter, USB PD / Power Mux Load Switch, Motor Drive H-Bridge Low-Side Switch.
Automotive Reverse-Battery Protection
The ZXMP6A17GQ's 60V VDS rating and 3A continuous ID make it a strong fit for 12V automotive reverse-battery protection circuits. The P-Channel part sits source-side to the load, with gate pulled down through a resistor-Zener network; during normal operation a low-side NPN or controller pulls the gate low to turn the MOSFET on, while reverse polarity lets the gate float up and keeps the device off, blocking current. AEC-Q101 qualification and IATF 16949 build (per the -Q suffix) are mandatory for OEM body-control modules. The 125 mΩ RDS(on) at VGS=-10V limits conduction loss to roughly 1.1W at the rated 3A, leaving thermal margin in the SOT-223-3 with proper copper-pour heatsinking.
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DC-DC Converter Synchronous Rectifier
The ZXMP6A17GQ works as a low-side synchronous rectifier in 12V-input buck converters where its low 125 mΩ RDS(on) at VGS=-10V reduces conduction loss compared to a Schottky diode. In a typical 3A buck design at 1 MHz switching frequency the MOSFET's fast switching and low Ciss minimise dead-time losses and prevent shoot-through. The 60V VDS rating provides ample margin across 24V industrial bus transients. Note that P-Channel synchronous rectifiers require gate drive referenced to the switching node; pair with a bootstrap or charge-pump driver. The SOT-223-3 footprint dissipates up to 2W on 100 mm² of copper pour, suitable for 3A continuous output.
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Power Tool Battery Management
Cordless power tools running on 18V-20V Li-ion packs benefit from the ZXMP6A17GQ's 60V VDS headroom and 3A continuous ID for charge/discharge path switching and cell-balancing MOSFETs. The P-Channel topology simplifies high-side switching in the battery management system because the gate driver can be referenced to ground instead of the pack voltage. AEC-Q101 qualification gives designers confidence for tools that experience high-vibration and high-temperature environments. The 190 mΩ RDS(on) at VGS=-4.5V is well-suited to direct microcontroller drive from a 3.3V rail during low-power standby, while the 125 mΩ rating at VGS=-10V engages during peak discharge.
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LED Lighting Load Switch
The ZXMP6A17GQ handles PWM dimming of automotive and architectural LED strings where its low RDS(on) minimises voltage drop across the switch and preserves brightness uniformity across parallel strings. At 3A continuous ID it can drive 30+ high-brightness LEDs in a single string from a 24V bus. Fast switching speed supports PWM dimming frequencies above 1 kHz without audible flicker or efficiency loss. The P-Channel configuration simplifies ground-referenced PWM control directly from a microcontroller GPIO. AEC-Q101 / PPAP qualification (-Q suffix) is required for OEM exterior lighting modules including headlights, tail lamps, and DRL strips that must survive load-dump transients.
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Industrial 24V Bus Hot-Swap / In-Rush Limiter
Industrial PLC and factory-automation backplanes running on 24V rails use the ZXMP6A17GQ as a hot-swap / in-rush current limiter where its 60V VDS rating absorbs inductive transients and the 3A continuous ID matches typical load profiles. P-Channel high-side switch placement means the gate driver stays at ground potential, simplifying opto-isolated or logic-level control. During plug-in events the designer can ramp the gate with an RC network to slow turn-on and limit dV/dt, protecting downstream capacitors from inrush. The SOT-223-3 with copper-pour heatsinking sustains 2W dissipation during steady-state 24V/1A operation with the remainder of the voltage drop absorbed by the MOSFET's RDS(on).
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USB PD / Power Mux Load Switch
The ZXMP6A17GQ's low gate drive threshold (4.5V VGS achieves 190 mΩ RDS(on)) makes it compatible with 5V USB power paths and 12V-20V USB Power Delivery rails up to 3A. P-Channel high-side switching isolates the source from the sink when VBUS is invalid, supports source-capability handshaking, and prevents back-feeding. The 60V VDS rating tolerates USB PD extended-power-range transients. Use the MOSFET in a load-switch configuration with a TVS for ESD and an upstream current-sense resistor for OCP. SOT-223-3 footprint is small enough for tablet, laptop, and docking-station power muxes while still dissipating 2W on copper pour.
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Motor Drive H-Bridge Low-Side Switch
Small brushed-DC and stepper motor drives below 3A per phase can use the ZXMP6A17GQ as a low-side switch in half-bridge or H-bridge topologies. The P-Channel placement in a low-side role (with the load tied to V+) eliminates the need for high-side bootstrap drivers and keeps gate drive simple. Its 4.3A pulsed current rating covers motor stall and start-up transients that exceed continuous ratings. At 24V motor supply the 60V VDS rating leaves headroom for inductive flyback spikes when paired with a flyback diode. The fast switching speed supports PWM frequencies up to 100 kHz for smooth torque control.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für ZXMP6A17GQ – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | ZXMP6A17G | ZXMP6A17GQTA | ZXMP6A17GTA | DMP3098L-7 | NTR4101PT1G |
|---|---|---|---|---|---|---|
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | onsemi |
| Package | SOT-223-3 (TO-261-4) | SOT-223-3 (TO-261-4) - same | SOT-223-3 (TO-261-4) - same | SOT-223-3 (TO-261-4) - same | SOT-223-3 - same | SOT-223-3 - same |
| VDS (Drain-Source Voltage) | -60 V | -60 V | -60 V | -60 V | -30 V (lower VDS) | -20 V (lower VDS) |
| Continuous Drain Current (TA=+25°C) | -3 A | -3 A | -3 A | -3 A | -3.5 A | -3.4 A |
| Automotive Grade (AEC-Q101) | Yes (-Q suffix) | No (commercial grade only) | Yes (-Q + tape-and-reel) | No (TA = tape-and-reel) | No (commercial grade) | Yes (onsemi automotive line) |
| RoHS / Lead-Free | Yes (Green, halogen-free) | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- AEC-Q101 qualified with IATF 16949 build (-Q suffix) (vs. ZXMP6A17G)
- Higher 60V VDS rating vs lower-voltage SOT-223 P-Channel alternatives (vs. DMP3098L-7)
- Logic-level 4.5V gate drive with low RDS(on) (vs. NTR4101PT1G (onsemi))
Designhinweise
Estimated: at VDS=-60V worst-case and ID=1A continuous, conduction loss P = I² × RDS(on) ≈ 1² × 0.125 = 0.125W, well within the 2W SOT-223-3 package limit. At 3A full load the same calculation yields ≈ 1.13W, leaving 0.87W margin to the 2W rating on a properly copper-poured PCB. Always use at least 100 mm² of 1 oz copper on the drain tab for the rated dissipation; without copper pour derate to roughly 0.7W. Mount the tab to the largest continuous copper area on the PCB that does not violate creepage/clearance.
Place the gate-drive resistor (10Ω-100Ω) as close to pin 1 as possible to dampen the high dV/dt produced by the low Ciss of the ZXMP6A17GQ. Add a 10kΩ-100kΩ gate-source pull-down resistor to keep the MOSFET off during microcontroller reset or power-up transients. Source the gate drive from a low-impedance path; a weak pull-up/down can oscillate with the gate-drain capacitance and cause shoot-through in half-bridge configurations. The SOT-223-3 tab pin 4 must be soldered to a copper pour that is electrically connected to pin 2 (drain).
Estimated: do not exceed the absolute maximum VGS rating (typically ±20V for trench P-Channel MOSFETs in this family); even brief transients above this level permanently damage the gate oxide. Always include a gate-source Zener clamp when the gate is driven from a higher-voltage rail. In reverse-battery protection circuits, ensure the gate Zener breakdown voltage is below VGS(max) but above the worst-case load-dump transient. For automotive AEC-Q101 designs, request the latest PPAP package from Diodes and verify change-control history before each production run.
Compliance-Informationen
RoHS compliant per Diodes product page; lead-free finish; halogen-free and antimony-free (Green device). AEC-Q101 qualified (-Q suffix) and PPAP capable; manufactured in IATF 16949 certified facilities. Conflict-minerals declaration per Diodes corporate policy.
