MOSFETs
Produkte (1294)
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUZ20N08S5L300ATMA1 is an 80 V N-channel power MOSFET rated for 20 A continuous drain current (Tc) and 30 W power dissipation, built on Infineon's OptiMOS-5 technology and housed in a 3.3 x 3.3 mm PG-TSDSON-8-32 (S3O8) surface-mount package. The device features a typical on-state resistance of 30 mΩ at 10 A / 10 V, an input capacitance of approximately 599 pF at 40 V, and a gate charge of around 10.5 nC at 10 V, making it well suited for high-frequency switching power stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or regulate current in power electronics. It belongs to the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs, and is the workhorse of modern switch-mode power supplies (SMPS), motor drives, and load switches. OptiMOS-5 is Infineon's fifth-generation trench MOSFET platform, delivering lower Rds(on) per unit silicon area, faster switching, and lower figure-of-merit (FOM = Rds(on) x Qg) than prior generations. Key features include an 80 V drain-source breakdown voltage suitable for 12 V and 24 V automotive buses (including 48 V mild-hybrid transients up to 80 V), a 175°C maximum operating junction temperature, and AEC-Q101 qualification for automotive use. The combination of low Rds(on) (30 mΩ) and small S3O8 footprint (3.3 x 3.3 mm) enables high power density designs. Compared to standard MOSFETs, OptiMOS-5 reduces switching losses by roughly 30-50%, which directly translates to higher efficiency and lower thermals in the same board area. Typical applications include LED lighting drivers, automotive powertrain ECUs, body-electronics modules, battery protection circuits in 12 V/24 V systems, and high-side/low-side buck or half-bridge converters. The combination of low charge and small package is particularly attractive in DC-DC converters where switching losses dominate efficiency at high frequencies. When designing with this part, keep the gate-drive voltage at 10 V to fully enhance the channel and achieve the rated 30 mΩ Rds(on). At lower gate voltages (e.g., 4.5 V), Rds(on) increases significantly and can cause thermal runaway. Always observe the 175°C junction temperature limit and provide adequate copper cooling. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, with all values cross-referenced against distributor listings and the Infineon part page.
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ30N06S5L140ATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated for 30 A continuous drain current (Tj) and 33 W power dissipation (Tc), housed in a compact surface-mount PG-TSDSON-8-32 (also known as S3O8, 3x3 mm) package. It features a maximum on-resistance of 14 mΩ at VGS=10 V and combines low gate charge, low QGD, and minimized parasitic capacitances to deliver best-in-class Figure-of-Merit (FOM) for switching-converter and motor-drive efficiency. The device is qualified to -55°C to 175°C Tj operation and is part of the automotive-grade (AEC-Q101) OptiMOS 5 60 V family. What is an OptiMOS 5 MOSFET? OptiMOS is Infineon's trench power-MOSFET platform, and the OptiMOS 5 generation represents the fifth major step in that platform, optimized for synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters, and motor control. The 60 V OptiMOS 5 family targets applications such as LED lighting drivers, ADAS power trees, USB-PD, and 48 V mild-hybrid subsystems, where low RDS(on) and low switching loss directly translate into cooler running parts and higher system efficiency. The MOSFET sits in the broader taxonomy: power MOSFET -> discrete semiconductor -> semiconductor, and as an N-channel enhancement-mode device it requires a positive gate drive to turn on. Key differentiating specifications include a 14 mΩ maximum RDS(on) at VGS=10 V, a total gate charge (Qg) of 12.2 nC at VGS=10 V, and a typical output capacitance (Coss) of 888 pF at VDS=30 V. The PG-TSDSON-8-32 footprint occupies only 3x3 mm of board area and uses a leadless S3O8 package with an exposed drain pad that provides both low thermal resistance and a low-source-inductance connection. Together these attributes minimize both conduction and switching losses, which is the central design goal of the OptiMOS 5 family. The internal architecture uses a deep-trench cell design that increases channel density per unit area while lowering the specific on-resistance (RDS(on)*Area). The result is a part that achieves 14 mΩ in a much smaller footprint than planar MOSFETs of comparable rating, and that can be driven with standard logic-level gate signals thanks to a typical VGS(th) in the 2.2 V neighborhood. The automotive-grade qualification (AEC-Q101) means the part is validated for harsh thermal and humidity stress typical of under-the-hood automotive environments. Typical applications include synchronous-rectification stages in 48 V-to-12 V DC-DC converters, high-side and low-side switches in motor-driver H-bridges, USB-PD and battery-management power-path FETs, and hot-swap controllers in 12 V/24 V industrial buses. The 60 V drain rating gives substantial margin for 24 V industrial rails and for the ringing seen on 12 V automotive load-dump transients. When designing with this part, place the gate-drive loop area as small as possible to minimize ringing, use a 10 Ω gate resistor to control dV/dt, and exploit the bottom-source/PCB-drain connection to spread heat through copper pours. Make sure VGS never exceeds the ±20 V absolute maximum, and prefer a 10 V drive when full RDS(on) performance is required. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond what the manufacturer datasheet provides in isolation.
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ30N08S5N186ATMA1 is an automotive-grade N-channel OptiMOS 5 Power MOSFET rated at 80 V drain-source voltage with an ultra-low on-state resistance of 18.6 mΩ typical, packaged in a surface-mount PG-TSDSON-8-32 (5x6 mm) outline. It is qualified to AEC-Q101 and targeted at 12 V and 24 V automotive battery systems, including body electronics, ADAS power distribution, and electric powertrain auxiliary rails. The S5N186 designation in the part number indicates its specific position within the OptiMOS 5 80 V family. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device where applying a positive gate-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs are the fundamental building blocks of modern power electronics, sitting at the bottom of a taxonomy that includes: power MOSFET -> discrete semiconductor -> power switch -> power management component. Compared with bipolar transistors, MOSFETs offer faster switching, simpler gate drive, and lower conduction losses, making them dominant in switched-mode power conversion. Key features include 80 V VDS rating, 30 A continuous drain current (Tj), 41 W power dissipation at Tc, and an ultra-low RDS(on) of 18.6 mΩ at VGS=10 V. The PG-TSDSON-8-32 package provides a low thermal resistance footprint with an exposed drain pad for direct PCB heat spreading, and its gull-wing leads are compatible with automated optical inspection and standard reflow profiles. The part is qualified to AEC-Q101, the industry standard for automotive discrete semiconductors. The device is built on Infineon's OptiMOS 5 trench process technology, which combines a high cell density with a low-resistance substrate to minimize both conduction and switching losses. Compared to planar MOSFETs, the trench geometry shrinks the cell pitch and increases transconductance, delivering lower gate charge (Qg) for a given RDS(on). This results in lower drive losses at high switching frequencies, enabling smaller magnetics in DC-DC converters and reduced EMI in motor drive stages. Typical applications include automotive 12 V/24 V battery switching, ECU power management, LED lighting drivers, e-fuse and circuit protection blocks, ADAS sensor power rails, and motor control for pumps, fans, and small actuators. The 80 V rating provides ample margin against 24 V load-dump transients per ISO 7637-2, while the low RDS(on) minimizes conduction loss and self-heating in high-current paths. Designers should size the gate drive circuit for the typical gate charge to ensure fast turn-on/turn-off and to minimize dead-time losses in synchronous topologies. The exposed drain pad must be soldered to a sufficiently large copper pour (typically >=1 oz copper over >=50 mm²) to keep junction temperature within the -55 °C to +175 °C automotive operating range. This page synthesizes distributor pricing, automotive-grade drop-in alternatives from the OptiMOS 5 family, and practical design notes not found in the manufacturer datasheet, including SOA guidance and PCB layout recommendations.
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ30N10S5L240ATMA1 is a 100 V N-channel power MOSFET in the OptiMOS 5 75V-120V family, rated for 30 A continuous drain current (Tc) and 24 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, housed in a surface-mount PG-TSDSON-8-32 (8-PowerTDFN) package with an exposed drain pad for low thermal resistance. It is part of Infineon's automotive-grade MOSFET portfolio and is qualified to AEC-Q101 for use in 12 V and 24 V automotive systems, including electric power steering, braking, body electronics, and DC-DC converter stages. An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses a gate-source electric field to modulate conduction between drain and source terminals. Within the semiconductor hierarchy it belongs to discrete transistors → MOSFETs → power MOSFETs → low-voltage trench MOSFETs. OptiMOS 5 is Infineon's fifth-generation trench technology, which optimizes figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) for high-frequency switching and reduced conduction loss, replacing earlier planar and earlier-trench generations. Key specifications include 100 V drain-source breakdown (V<sub>(BR)DSS</sub>), 24 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V (per the manufacturer datasheet), gate charge of 14 nC, and input capacitance of 832 pF at V<sub>DS</sub>=50 V. The PG-TSDSON-8-32 package provides a Kelvin-source connection and an exposed metal pad that simultaneously serves as the drain terminal and the primary thermal path to the PCB, enabling high current density in compact layouts. The part dissipates up to 45.5 W (Tc) under manufacturer-defined thermal conditions. Typical applications include automotive 12 V/24 V load switching, high-side and low-side switches in DC-DC buck/boost converters, motor drive half-bridges for pumps and fans, and reverse-battery protection circuits. The 100 V rating also provides ample transient margin for 24 V systems that experience load-dump events. Compared with the previous OptiMOS 3 generation, the IAUZ30N10S5L240 reduces R<sub>DS(on)</sub> by approximately 30% at the same die size, reducing conduction loss and improving thermal performance. When designing with this part, place gate-drive resistors close to the gate pin to limit ringing, and provide a 10 kΩ gate-source pull-down to prevent accidental turn-on during supply transients. The Kelvin-source pin must be bonded directly to the IC's source pad and to the gate-driver ground return to avoid source-induced gate-drive loss. This page synthesizes distributor pricing, drop-in alternatives, and PCB-level design notes beyond what appears in the manufacturer datasheet.
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ40N06S5L050ATMA1 is a 60 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 automotive process, delivering 90 A continuous drain current (Tj), 71 W power dissipation (Tc), and an industry-leading 5 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, packaged in a compact PG-TSDSON-8-33 surface-mount outline. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that converts digital gate drive into high-current load switching. Within the broader taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> power transistors; the N-channel enhancement-mode variant is the dominant polarity for low-side and high-side switching because electron mobility is roughly 2-3× higher than hole mobility, giving lower on-resistance per unit silicon area. The IAUZ40N06S5L050 belongs to the OptiMOS 5 60 V automotive family, optimized for synchronous rectification, DC-DC conversion, and motor drive. Key specifications include a gate charge Q<sub>G</sub> of 28.2 nC, gate threshold V<sub>GS(th)</sub> of 2.2 V at 29 µA, and an operating junction temperature range of -55 °C to +175 °C qualifying it for AEC-Q100 automotive environments. The OptiMOS 5 super-junction architecture reduces both conduction and switching losses simultaneously, enabling higher switching frequencies (≥100 kHz) and smaller magnetics in downstream converters. This device targets high-current automotive applications where PCB area is constrained but thermal performance cannot be compromised. The PG-TSDSON-8-33 package features an exposed drain pad that doubles as the thermal interface, allowing direct heat dissipation into the copper pour. Compared with traditional D²PAK or TO-220 packages of equivalent R<sub>DS(on)</sub>, the TSDSON-8-33 footprint is roughly 60% smaller while maintaining equivalent thermal resistance. Typical applications include 12 V/48 V automotive DC-DC converters, LED headlight drivers, ADAS power supplies, eMobility traction inverters, and battery management system (BMS) protection circuits. The part's combination of low R<sub>DS(on)</sub> and low Q<sub>G</sub> makes it particularly suited for synchronous rectification in high-frequency buck converters where both conduction loss and switching loss dominate the efficiency budget. When designing with this MOSFET, observe the SOA envelope carefully - pulsed drain current handling decreases rapidly at elevated V<sub>DS</sub>. Use a gate drive voltage of 10 V for full R<sub>DS(on)</sub> specification; driving at 4.5 V (logic level) approximately doubles conduction loss. The datasheet's thermal resistance value assumes a 2s2p FR4 PCB per JEDEC JESD51-5/-7 - actual in-application R<sub>θJA</sub> depends heavily on copper-pour area and airflow. This page synthesizes Infineon datasheet parameters, distributor pricing snapshots, and drop-in alternative recommendations not found in the standalone manufacturer datasheet - giving design engineers and procurement teams a single source for both technical evaluation and sourcing decisions.
IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ40N06S5N050ATMA1 is an N-channel automotive-grade OptiMOS 5 power MOSFET rated at 60 V drain-source voltage with a typical on-state resistance of 5 mΩ and continuous drain current up to 40 A, packaged in the industry-standard PG-TSDSON-8-33 (3.3 x 3.3 mm) surface-mount footprint. Built on Infineon's latest OptiMOS 5 60 V silicon platform, it delivers industry-leading FOM (RDS(on) × QG) and is AEC-Q101 qualified for automotive electronics. The device is supplied on tape and reel and targets high-efficiency synchronous rectification, DC-DC conversion, and motor drive stages. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET technology, optimized for 60 V systems to deliver lower conduction loss, faster switching, and reduced gate charge versus previous generations. Within the broader taxonomy, this part is an N-channel enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor -> power management component. Key specifications include 5 mΩ typical RDS(on) at VGS=10 V, a maximum drain current (ID) of 40 A at TC, 71 W maximum power dissipation, and a gate threshold voltage typically around 1.7 V. The OptiMOS 5 cell structure provides exceptionally low QG and QGD, enabling high-frequency switching (>1 MHz) with minimized driver losses. The PG-TSDSON-8 package with exposed pad achieves low thermal resistance (~1.2 C/W RthJC) suitable for high-current surface-mount designs. Typical applications include 48 V automotive systems (mild-hybrid DC-DC converters), secondary-side synchronous rectification in isolated DC-DC topologies, BLDC motor drive H-bridges, and high-current load switching in power distribution units. The combination of low RDS(on) and small footprint enables higher power density designs. When designing with this device, ensure the gate driver can supply sufficient peak current (>1 A) to charge the input capacitance at the target switching frequency. Use Kelvin-source PCB layout when possible to minimize source-inductance-induced ringing, and keep the gate-loop area small to control EMI.
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUZ40N08S5N100ATMA1 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS™-5 technology, rated for 40 A continuous drain current (Tc) and 68 W power dissipation in a compact PG-TDSON-8 (S3O8) surface-mount package. The part is automotive qualified (AEC-Q101), optimized for low RDS(on) of 10 mΩ at VGS=10 V and a maximum gate charge of 24.2 nC, making it well-suited for high-efficiency switching applications in 12 V and 24 V automotive powertrains. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify electrical signals in power conversion. N-channel MOSFETs like the IAUZ40N08S5N100 conduct when a positive gate-source voltage is applied, and they sit in the power semiconductor hierarchy between signal-level transistors and high-current IGBT modules. The OptiMOS family specifically targets synchronous rectification, motor drive, and DC-DC conversion where switching loss and conduction loss must both be minimized. Key specifications include a drain-source breakdown voltage of 80 V, a continuous drain current of 40 A at 25 °C case temperature, gate threshold voltage (VGS(th)) typically around 2.5 V to 3.5 V, and an input capacitance of approximately 1591 pF at 40 V. The PG-TDSON-8 package exposes the drain through the thermal pad, enabling direct PCB cooling with a very low junction-to-case thermal resistance and eliminating the need for an external heatsink in many applications. Architecturally, the device uses a trench-gate cell structure that reduces on-state resistance per unit silicon area while keeping gate charge low. The combination of low RDS(on) (10 mΩ), moderate Qg (24.2 nC), and a small 3.3 × 3.3 mm footprint gives an excellent figure of merit (FOM = RDS(on) × Qg) for high-frequency switching converters up to several hundred kHz. Typical applications include automotive LED lighting drivers, 12 V/48 V board-net converters, electric power steering (EPS), braking system pumps, and solenoid or relay drivers. The wide VDS rating also allows use as a protection switch in industrial 24 V systems and as the low-side switch in half-bridge motor drives. When designing with this part, ensure the gate driver can supply the 24.2 nC gate charge with adequate rise/fall times, and observe strict PCB layout practices (minimized source-loop inductance) to avoid voltage spikes that could exceed the 80 V rating. A small RC snubber or gate-source resistor often improves EMI in PWM-driven applications. This page synthesizes distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUZ40N10S5N130ATMA1 is a 100 V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated for 40 A continuous drain current (Tc) and 68 W maximum power dissipation (Tc). It features an ultra-low typical R<sub>DS(on)</sub> of 10 mΩ (some sources cite 13 mΩ max in the datasheet title) in a compact 3.3 × 3.3 mm PG-TSDSON-8-33 (S3O8) surface-mount package, making it one of the most figure-of-merit-efficient 100 V FETs in its footprint class. The device is AEC-Q101 qualified for automotive reliability and supports a pulsed drain current (IDM) of 160 A for short-duration switching transients. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate field to modulate conduction between source and drain terminals. N-channel MOSFETs such as the IAUZ40N10S5N130 sit in the hypernym hierarchy discrete semiconductor → transistor → MOSFET → N-channel MOSFET → power MOSFET. Within Infineon's portfolio they belong to the OptiMOS 5 family, which targets high-frequency, low-loss switching in automotive and industrial converters. Key features include a maximum drain-source voltage V<sub>DS</sub> of 100 V, low gate charge for fast switching, an integrated body diode for inductive commutation, and automotive-grade reliability per AEC-Q101. The PG-TSDSON-8-33 package uses an exposed drain pad for top-side cooling, enabling direct PCB thermal dissipation without an external heatsink at moderate loads. R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> is specified at 13 mΩ maximum per the Infineon product page header. Technically, the device uses Infineon's latest-generation OptiMOS 5 super-junction trench technology, which achieves the lowest R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit in its voltage class. The result is reduced switching losses in high-frequency DC-DC converters and motor-drive half-bridges, plus lower conduction losses in synchronous rectification. This translates directly into higher system efficiency and smaller magnetics in switched-mode power supplies. Typical applications include automotive 48 V mild-hybrid DC-DC converters, LED lighting drivers, motor control and powertrain systems, synchronous rectification in telecom and server SMPS, and battery protection circuits in e-mobility. It is also widely used in industrial solar optimizers and high-current USB-PD sinks. Designers choose it where a 100 V rating margin and AEC-Q101 reliability are needed in a tiny 3.3 × 3.3 mm footprint. When laying out the PCB, place the source-sense Kelvin connection directly to the package source pad, keep the gate-loop area under 1 cm² to minimize ringing, and use 4-layer FR-4 with at least 2 oz copper on the top layer to spread heat from the exposed drain pad. At 68 W dissipation into a properly designed thermal land pattern, the device can sustain continuous operation without forced airflow. This page synthesizes distributor pricing, drop-in OptiMOS 5 alternatives, and practical layout guidance not collected in any single datasheet page, enabling faster design-in decisions for automotive and industrial power engineers.
IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon
The Infineon IAUZN04S7L025ATMA1 is an automotive-grade OptiMOS™-7 N-channel power MOSFET rated 40 V VDS, 2.56 mΩ maximum RDS(on), and continuous drain current up to 60 A (117 A pulsed at Tc), housed in a leadless PG-TSDSON-8-44 (S3O8) surface-mount package. This product targets high-current synchronous-rectification, OR-ing, hot-swap and motor-drive stages in 12 V and 24 V automotive ECUs where conduction loss dominates the thermal budget. What is an N-channel power MOSFET? An N-channel power MOSFET is a voltage-controlled majority-carrier switch that uses an insulated gate to modulate electron flow between drain and source. Compared with older planar trench MOSFETs, OptiMOS-7 technology shrinks the cell pitch and optimizes the super-junction structure to deliver lower figure-of-merit (RDS(on)×Qg) per unit silicon area, which is the key metric for high-frequency switching converters. Key features include 2.56 mΩ max RDS(on) at VGS=10 V, ultra-low gate charge Qg optimized for high-frequency operation, and an integrated gate-protection ESD structure. The S3O8 package exposes a wide thermal pad that achieves a junction-to-case thermal resistance in the single-digit mΩ·°C/W range, allowing direct PCB heatsinking with minimal copper area. The part is AEC-Q100 qualified and PPAP-capable, satisfying automotive ECU reliability requirements. From an architectural standpoint, OptiMOS-7 achieves its low RDS(on) through an advanced trench process combined with a thin wafer backside metallization that improves heat extraction. The result is a device that can replace larger TO-220 or TO-263 MOSFETs on the same PCB without re-routing the thermal layer. Typical applications include 12 V automotive ECU power distribution, electric power steering (EPS) half-bridges, DC-link discharge switches, and high-current USB-PD source paths. It is equally suited to industrial 24 V hot-swap controllers and telecom OR-ing. When designing with this MOSFET, prioritize gate-drive robustness: a 10 V gate-source drive is required to reach the rated RDS(on), and the switching node should be kept short to limit ringing. The exposed pad must be soldered to a continuous copper pour sized for the expected continuous current. This page synthesizes distributor stock, drop-in same-package alternatives, and practical PCB-layout guidance not consolidated in the Infineon datasheet.
IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUZN04S7L030ATMA1 is an automotive-grade OptiMOS™-7 N-channel power MOSFET rated at 40 V drain-source voltage with an ultra-low 3.05 mΩ maximum on-state resistance (at 10 V VGS) and continuous drain current of 60 A, packaged in the compact S3O8 (PG-TSDSON-8-44) 3x3 mm² surface-mount footprint. The device delivers 58 W power dissipation at Tc and supports 100 A pulsed drain current, providing ample headroom for transient loads in automotive 12 V systems. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source when a sufficient gate-source voltage is applied. Low-voltage N-channel MOSFETs like the IAUZN04S7L030 belong to the discrete semiconductor power-switch family, sitting below IGBTs and super-junction MOSFETs in the voltage hierarchy and above standard small-signal MOSFETs in current capability. They serve as the primary switching element in synchronous buck converters, ORing circuits, motor drives, and reverse-battery protection blocks. Key features of the IAUZN04S7L030 include best-in-class figure-of-merit (FOM = RDS(on) × Qg), reduced gate charge for high-frequency switching, integrated protection against avalanche and ESD events, and an exposed drain pad (pin 5) that doubles as a thermal dissipation path. The OptiMOS™-7 process technology reduces switching losses by approximately 30% compared to previous generations, allowing higher switching frequencies in SMPS designs without compromising efficiency. The device is qualified to AEC-Q101 for automotive applications and meets RoHS compliance. The S3O8 / PG-TSDSON-8-44 package features a low thermal resistance path through the bottom-exposed drain pad, enabling direct cooling via PCB copper. The 8-pin layout (drain, gate, source, and thermal pad) is optimized for high-current DC-DC converters, USB-PD/EPR power-path switches, and automotive LED drivers. The IAUZN04S7L030's 40 V rating provides generous margin above the 18 V maximum transients of automotive 12 V systems while staying well below the breakdown voltage. Typical applications include automotive 12 V board-net switching, synchronous rectification in isolated DC-DC stages, USB-PD high-current charging ports, e-fuse and hot-swap controllers, and high-current motor drive H-bridges. The wide safe operating area makes the part suitable for repetitive avalanche events in inductive load switching. When designing with this MOSFET, ensure VGS(th) is respected at cold temperatures (typ. 1.7 V) and that gate-drive voltage swings to at least 10 V for full RDS(on) performance. A gate-source resistor (typ. 10 kΩ) prevents floating-GS turn-on during transients. This page synthesizes distributor pricing from DigiKey and Mouser, parametric drop-in alternatives sourced from the same OptiMOS-7 family, and design notes not consolidated in the manufacturer datasheet.
IAUZN04S7N049ATMA1 - 40V OptiMOS-7 60A Auto MOSFET | Infineon
The Infineon IAUZN04S7N049ATMA1 is an N-channel 40V automotive power MOSFET built on Infineon's OptiMOS-7 process technology, rated for 60A continuous drain current in a PG-TSDSON-8-44 (5x6 mm) surface-mount package. According to the Infineon datasheet for the IAUZN04S7N049 family, this part delivers an ultra-low R<sub>DS(on)</sub> of 1.2 to 4.9 mOhm, with 14A continuous current at ambient (Ta) and up to 70A pulsed at T<sub>j</sub>. The device is qualified to AEC-Q101 standards for automotive power-train and BLDC drive applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals. Low-voltage N-channel MOSFETs like the IAUZN04S7N049 belong to the discrete semiconductor family and are typically deployed as synchronous rectifiers, high-side/low-side switches, or motor-drive outputs in the 12V automotive electrical system. Their place in the system hierarchy is: MOSFET -> power transistor -> discrete semiconductor -> semiconductor. Key features of the IAUZN04S7N049ATMA1 include its low 1.2-4.9 mOhm R<sub>DS(on)</sub> (V<sub>GS</sub>=10V), 45W power dissipation at T<sub>c</sub>, and an optimized gate charge profile for high-frequency switching. The OptiMOS-7 process improves figure of merit (FOM) versus prior OptiMOS generations, reducing both conduction and switching losses in PWM-driven loads. The IAUZN04S7N049ATMA1's architecture uses a trench-gate structure with a 40V breakdown voltage optimized for 12V automotive bus rails. With Tj rated up to 175C, the device can handle harsh under-hood thermal environments. According to Infineon's automotive MOSFET portfolio, this part is targeted at BLDC motor drives, DC-DC converters, and high-current solenoid drivers where conduction loss dominates total dissipation. Typical applications include automotive 12V BLDC motor drives (cooling fans, water pumps, oil pumps), 12V to 48V DC-DC converters, eFuse and high-side switch circuits, and body-electronics load drivers. The low R<sub>DS(on)</sub> makes it especially suitable for high-current paths where minimizing conduction loss and PCB copper area is critical. Designers should observe the safe operating area (SOA) curve carefully when using this part in linear-mode hot-swap or eFuse applications. The 5x6 mm PG-TSDSON-8-44 footprint requires careful thermal-via design under the exposed pad; inadequate thermal vias will push T<sub>j</sub> above safe limits at full 60A continuous current. This page synthesizes distributor pricing, AEC-Q101 qualified drop-in alternatives, and application-specific design notes not aggregated on any single distributor or manufacturer page.
IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUZN08S7L177ATMA1 is an automotive-grade OptiMOS™-7 N-channel power MOSFET rated at 80 V VDS, 35 A continuous drain current (Tj) and 45 W power dissipation (Tc), housed in a surface-mount PG-TSDSON-8-44 (S3O8, 3x3 mm²) package with a maximum on-resistance of 17.7 mΩ. Designed for high-efficiency switching in 12 V / 24 V / 48 V automotive and industrial power trains, the part belongs to Infineon's latest-generation OptiMOS 7 family which delivers benchmark figure-of-merit (FOM = RDS(on)·Qg) for high-frequency DC-DC and motor-drive topologies. A power MOSFET is a voltage-controlled majority-carrier switch used to convert and route energy in switched-mode power supplies (SMPS), motor drives, load switches and protection circuits. Within the broader component taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> field-effect transistors, and OptiMOS 7 represents Infineon's automotive-qualified 30 V-800 V power MOSFET platform optimized for low conduction loss, low switching loss and high avalanche ruggedness. Key features include a 17.7 mΩ maximum RDS(on) at VGS=10 V, an ultra-low gate charge Qg typical of the OptiMOS 7 generation, logic-level VGS(th) for direct microcontroller drive, and 100% Rg and UIS tested. The automotive-grade qualification makes the device suitable for AEC-Q101 environments, while the 3x3 mm² S3O8 footprint enables compact PCB layouts for high-density power designs. The OptiMOS 7 silicon uses an advanced trench MOSFET architecture with optimized cell pitch to balance RDS(on) and switching charge, delivering higher efficiency than OptiMOS 5/6 predecessors at the same footprint. Low thermal resistance to case (RthJC) supports high continuous currents, and the leadless PG-TSDSON-8-44 package provides low package inductance which is critical for fast-switching half-bridge and synchronous-rectifier stages. Typical applications include 48 V mild-hybrid DC-DC converters, automotive e-fuse protection, battery management system (BMS) charge/discharge switches, LED driving front stages, and high-side/low-side motor control H-bridges. The 80 V rating gives ample headroom above 48 V bus transients. When designing, ensure VGS drive is firmly in the 10 V enhancement region for lowest RDS(on), use a gate-source resistor to suppress parasitic oscillation, and observe land-pattern recommendations in the datasheet to keep the S3O8 thermal pad soldered for proper heat extraction. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet to support faster BOM decisions.
IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon
The Infineon IAUZN10S7L289ATMA1 is an Automotive-grade OptiMOS™-7 N-channel power MOSFET rated at 100 V drain-source voltage, 27 A continuous drain current (Tj), and 45 W power dissipation (Tc), housed in the compact PG-TSDSON-8-44 (S3O8, 3x3 mm²) surface-mount package. The part delivers a maximum on-state resistance (RDS(on)) of 28.9 mΩ and targets high-efficiency automotive power conversion. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for power conversion and switching. N-channel MOSFETs conduct when a positive gate-source voltage is applied and are the dominant technology in low-voltage, high-current power stages. The OptiMOS-7 family sits in Infineon's power MOSFET hierarchy (OptiMOS-7 > OptiMOS Power-MOSFET > power semiconductor > discrete semiconductor), engineered for automotive AEC-Q100 qualified applications with optimized figure-of-merit (FOM = RDS(on) × Qg). Key features include a maximum RDS(on) of 28.9 mΩ at VGS=10 V, 100 V VDS rating, 27 A continuous ID (Tj), and 45 W power dissipation. The S3O8 (3x3 mm) package footprint offers an excellent power-density ratio, enabling compact DC-DC converter and motor-drive designs. The automotive-grade qualification makes this part suitable for safety-critical systems. The OptiMOS-7 technology uses an advanced trench-gate structure that minimizes conduction losses and gate charge, improving switching performance. Compared to previous OptiMOS generations, the -7 family delivers lower RDS(on) × Qg figure-of-merit, enabling higher switching frequencies and smaller magnetics in SMPS designs. The 100 V rating also provides ample headroom for 48 V automotive bus rails and telecom hold-up applications. Typical applications include automotive 48 V DC-DC converters, electric power steering (EPS), braking system motor drivers, LED headlamp drivers, and high-current OR-ing switches. The automotive-grade qualification extends to body electronics modules where AEC-Q100 compliance is required for OEM acceptance. When designing with this device, ensure adequate PCB copper area for thermal dissipation. At 27 A continuous current, even with 28.9 mΩ RDS(on) (≈ 21 W conduction loss), a substantial thermal pad or copper pour is required to keep the junction temperature below the 175 °C limit. Gate drive should swing fully to 10 V for lowest RDS(on). This page synthesizes distributor pricing, parametric drop-in alternatives, and practical thermal/PCB design notes not found in the manufacturer datasheet.
IGC019S06S1 - 60V GaN Transistor, 1.3mΩ, PQFN 3x5 | Infineon
The Infineon IGC019S06S1 is a 60 V CoolGaN™ G3 normally-off enhancement-mode GaN power transistor in a PQFN 3x5 package with a typical on-state resistance of 1.3 mΩ, delivering a continuous drain current of 27 A (Ta) to 99 A (Tc) and supporting high-frequency, high-density power conversion. GaN (Gallium Nitride) transistors are wide-bandgap power semiconductors that switch much faster and with lower losses than silicon MOSFETs of equivalent Rds(on), enabling smaller magnetics and higher efficiency in switched-mode power conversion. Within the CoolGaN family hierarchy, the 60 V G3 sits between the 100 V/120 V G3 line and the lower-voltage G5 line, targeting point-of-load converters, Class-D audio, and motor-drive applications where switching frequency, dead-time loss, and reverse-conduction behaviour dominate the figure of merit. Key specifications include 60 V drain-source voltage rating, 1.3 mΩ typical Rds(on), a thermally-enhanced PG-TSON-6-2 (PQFN 3x5) surface-mount package, and integrated gate protection. The normally-off e-mode structure simplifies gate drive (compatible with standard gate-drive ICs) and removes the need for a negative rail. The very low on-state resistance and small package footprint enable high power density designs in 48 V point-of-load, telecom brick, and USB-PD applications. Technically, the device leverages Infineon's G3 CoolGaN process, which provides an order-of-magnitude lower gate charge (Qg) and output charge (Qoss) than equivalent silicon MOSFETs, dramatically reducing switching-related losses at high frequency. The exposed top metal and source-sense pin arrangement support a Kelvin-source connection for the cleanest gate loop at >100 V/ns switching. Typical applications include 48 V point-of-load conversion for datacom and AI-server rails, high-efficiency USB-PD chargers, Class-D audio amplifiers, BLDC motor drives, and industrial SMPS where power density and efficiency are primary design drivers. When designing with the IGC019S06S1, ensure the gate-drive loop is minimised (Kelvin-source connection strongly recommended), input decoupling is placed close to the drain/source pads, and the PCB thermal pad uses adequate copper pour to handle up to 45 W (Tc) dissipation. Avoid exceeding the maximum junction temperature. This page synthesises distributor pricing, drop-in alternatives and practical design notes not found on the manufacturer product page, delivering engineering-ready context for sourcing and design-in decisions.
IGC025S08S1XTMA1 - 80V GaN FET, 1.8mOhm PQFN 3x5 | Infineon
The Infineon IGC025S08S1XTMA1 is an 80 V normally-off enhancement-mode (e-mode) GaN power transistor in a 6-pin PQFN 3x5 surface-mount package, delivering up to 86 A pulsed drain current (Tc) and a typical on-state resistance of 1.8 mOhm. As a member of Infineon's CoolGaN Generation 3 (G3) family, it provides ultra-low gate charge, ultra-low output charge, and zero reverse recovery charge, enabling switching frequencies well beyond the practical limits of silicon MOSFETs. A Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is a wide-bandgap power semiconductor that conducts electrons through a two-dimensional electron gas (2DEG) channel formed at an AlGaN/GaN heterojunction. Unlike silicon MOSFETs, GaN HEMTs have no body diode and therefore exhibit no reverse recovery charge (Qrr), making them ideal for hard-switched and half-bridge topologies. GaN transistors sit within the wider power-semiconductor hierarchy: GaN HEMT -> wide-bandgap semiconductor -> power transistor -> discrete semiconductor -> power management. Key features of the IGC025S08S1 include a maximum drain-source voltage (VDS) of 80 V, continuous drain current of 23 A at TA (25 C ambient) and 86 A at TC (case), power dissipation of 3.3 W (TA) and 45 W (TC), and a threshold voltage of 2.9 V maximum at 10 mA. Its exposed-die PQFN package enables top-side cooling and very low thermal resistance, supporting high power density layouts. The part is offered on Tape & Reel (XTMA1 suffix). Architecturally, the IGC025S08S1 uses a GaN-on-Si e-mode HEMT with an integrated gate structure that produces a normally-off characteristic without a cascode configuration, simplifying gate drive to a standard logic-level or 0-10 V drive. The result is a hard-switching figure of merit (FOM = RDS(on) x QG) more than 5x better than comparable silicon MOSFETs, which translates directly to lower switching losses, smaller magnetics, and higher system efficiency in compact power-conversion designs. Typical applications include 48 V DC-DC converters for data-center and telecom intermediate bus converters, server and AI-accelerator point-of-load supplies, high-frequency Class-D audio amplifiers, USB-PD and notebook adapters, photovoltaic microinverters, motor drives, and on-board chargers for light electric vehicles. The combination of high switching frequency (1 MHz+) capability and small footprint makes the IGC025S08S1 especially attractive where power density and efficiency are primary design constraints. When designing with this part, pay close attention to gate-drive layout - keep the gate-loop inductance below 1 nH by placing the gate driver within 5 mm of the gate pin and using a Kelvin-source connection where possible. Unlike Si MOSFETs, GaN HEMTs have no avalanche rating, so VDS transients must be clamped below 80 V with a low-inductance snubber or TVS. This page consolidates distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes that complement - rather than duplicate - the Infineon manufacturer datasheet.
IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon
The Infineon IGI60L1111B1MXUMA1 is a 600 V, 110 mΩ half-bridge power stage integrating two enhancement-mode CoolGaN™ G5 switches with isolated gate drivers and a bootstrap diode in a 6 x 8 mm PG-TFLGA-27-2 package. It supports output current up to 7.4 A and an input supply of 10 V to 20 V for the gate-drive section, delivering a compact, high-density power conversion building block for motor drives and switched-mode power supplies. A GaN half-bridge power stage (often called an integrated power module or IPM) is a discrete-style power-conversion building block that combines two gallium-nitride switches with their gate drivers on a single substrate. Within the broader taxonomy, it belongs to the power-semiconductor module family -> discrete GaN FETs -> wide-bandgap semiconductors. Integrating the driver eliminates parasitic loop inductance between gate-driver outputs and the GaN gates, which is the single biggest obstacle to exploiting the multi-MHz switching capability of GaN. Key features include 600 V drain-source blocking capability, a typical on-resistance of 110 mΩ per switch at room temperature, integrated bootstrap diode that removes an external component, and a logic-level PWM input that interfaces directly with 3.3 V microcontrollers. The 110 mΩ Rdson combined with the low package inductance translates to very low switching loss compared with silicon MOSFETs, enabling either higher switching frequencies (smaller magnetics) or higher efficiency at conventional frequencies. Architecturally, each GaN switch is driven by a dedicated on-chip gate driver with 1 ns typical propagation matching, allowing the half-bridge to operate at switching frequencies well above 1 MHz when paired with appropriate magnetics and gate-loop PCB layout. The integrated bootstrap diode simplifies high-side supply generation, while under-voltage lockout on both the high-side and low-side rails protects the switches from insufficient gate enhancement during start-up or transient dips. Typical applications include low-to-medium power motor drives (compressor, fan, small appliance), telecom and server auxiliary SMPS, class-D audio amplifiers, photovoltaic micro-inverters, and USB-PD / laptop adapters. Designers value the small 6 x 8 mm footprint for high-density layouts where traditional discrete half-bridges require significantly more board area. When designing with this part, place decoupling capacitors as close as possible to the VCC and bootstrap pins and keep the high-current power loop area to a minimum to realise GaN's switching-speed benefit. Avoid slow PWM edges or excessive dead-time, which can trigger the hard-switching shoot-through protection. This page synthesizes Infineon-datasheet parametric data, distributor stock and pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet.
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
The Infineon IGI60L5050B1MXUMA1 is a 600 V gallium-nitride (GaN) half-bridge power stage with two 500 mΩ enhancement-mode GaN switches, integrated high-side and low-side gate drivers, level shifting, and an integrated ultra-fast low-resistance bootstrap diode, packaged in a 27-pin PG-TFLGA-27-2 (6x8 mm) chip-scale package. It targets high-frequency, high-efficiency switched-mode power conversion where silicon MOSFETs are loss-limited. A GaN half-bridge power stage combines two GaN FETs and a high-side/low-side driver in a single package, eliminating parasitic inductance between switches and gate loop, enabling sub-nanosecond switching transitions and reducing dead-time losses compared to discrete silicon implementations. GaN (gallium nitride) is a wide-bandgap semiconductor with lower on-resistance per unit area, no reverse-recovery charge (Qrr ≈ 0), and higher switching slew rates than silicon MOSFETs, making GaN half-bridges the preferred power stage for totem-pole PFC, LLC converters, and high-frequency motor drives. Key features of the IGI60L5050B1MXUMA1 include source/sink driving current of +0.29 A / -0.7 A, application-configurable turn-on and turn-off dV/dt for EMI tuning, an integrated bootstrap diode that eliminates an external high-voltage diode, and 600 V drain-source rating. The exposed top pad provides low thermal resistance to the PCB copper, allowing sustained high-current switching without an external heatsink. Architecturally the device integrates a level shifter, low-side gate driver, high-side gate driver, two 500 mΩ GaN switches, and a bootstrap diode monolithically in CoolGaN™ technology. This integration reduces the gate-drive loop inductance to near-zero and allows switching frequencies up to several MHz, dramatically shrinking magnetics and output capacitor size in SMPS designs. The configurable gate resistors allow designers to trade switching loss against EMI margin per application. Typical applications include totem-pole bridgeless PFC front-stages in server and telecom power supplies, LLC and HF resonant converters up to 1-2 kW, photovoltaic micro-inverters and optimizers, industrial SMPS, and high-frequency BLDC motor drives. The wide 600 V rating also makes it suitable for 400 V EV auxiliary converters and on-board chargers. When designing with this part, observe the maximum junction temperature (typically 150 °C), keep high-side bootstrap voltage above UVLO threshold at all switching frequencies, and minimize the power-loop layout inductance to less than 5 nH for clean switching. Use the configurable gate resistor pins to tune dV/dt against EMI compliance limits. This page synthesizes distributor pricing, drop-in alternative analysis, and practical PCB-layout design notes that go beyond the manufacturer datasheet.
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
The Infineon IGI65D1414A3MSXUMA1 is a 650 V enhancement-mode CoolGaN™ half-bridge power stage integrating two 140 mΩ (typical R_DS(on)) GaN HEMTs in a compact 6x8 mm PG-TIQFN-32-1 (QFN-32) package. The monolithic half-bridge delivers the superior switching behavior of GaN (no reverse-recovery charge, low output capacitance, sub-ns transitions) while shrinking the PCB footprint versus discrete high-side + low-side layouts, enabling higher power density in space-constrained converters. A GaN HEMT (High-Electron-Mobility Transistor) is a wide-bandgap power transistor that conducts through a two-dimensional electron gas formed at an AlGaN/GaN heterojunction. Compared with silicon MOSFETs, GaN offers lower gate charge, zero reverse-recovery body-diode loss, and much smaller capacitances, allowing converters to switch at multi-hundred-kHz to MHz frequencies with high efficiency. The "half-bridge" configuration (one high-side + one low-side switch with a switched node) is the basic building block of synchronous buck, boost, totem-pole PFC, and Class-D audio stages. Key features include 650 V drain-source blocking voltage, 140 mΩ typical on-resistance per switch, an integrated gate-drive-optimized source connection, and a thermally enhanced QFN-32 package with exposed top-side cooling. The co-packaged half-bridge is targeted at high-density AC-DC adapters, low-power motor drives, and LED lighting. Architecturally, the two GaN FETs share a common substrate with isolated drain/source pads for high-side and low-side; the package's source-down exposed pad provides a low-impedance thermal path. This integration reduces parasitic loop inductance between the FETs and the driver, enabling cleaner switching waveforms and reduced EMI. Typical applications include 65-240 W USB-PD adapters, totem-pole PFC front ends, BLDC motor drive half-bridges, Class-D audio amplifiers, and high-frequency LLC or active-clamp flyback converters. The wide 650 V rating also supports universal-input (90-264 VAC) offline designs. When designing with this device, follow Infineon's recommended gate-drive layout (minimum power-loop inductance, isolated high-side drive return) and ensure adequate thermal copper on the exposed pad. The GaN FETs require a gate-drive supply referenced to the Kelvin-source pin to suppress source-inductance-induced turn-on losses. This page synthesizes verified distributor pricing, same-brand CoolGaN alternatives, drop-in QFN-32 options, and practical design notes not found in the standalone manufacturer datasheet.
IGK120B041SXTSA1 - 40V GaN Bidirectional Switch | Infineon
Infineon IGK120B041SXTSA1 is a 40 V normally-off, monolithic bidirectional GaN power switch (CoolGaN BDS) housed in a chip-scale SG-UFWLB-16-2 (WLCSP 1.2x1.7 mm) package, rated for 30 A continuous drain current (Tc) and 15 W power dissipation (Tc). It is built on Infineon's third-generation (G3) medium-voltage gallium nitride on silicon process, providing symmetric 40 V blocking in both polarities from a single die, which eliminates the need for back-to-back silicon MOSFETs in AC and bidirectional DC applications. The device features a 1.2 W rating at TA, a 4.4 nC total gate charge, and ultra-low on-state resistance for the 40 V class, enabling high-frequency, high-density power conversion. A bidirectional switch (BDS) is a four-quadrant semiconductor device that can block voltage and conduct current in either direction when turned on, functionally equivalent to two anti-series transistors sharing a common drain. CoolGaN BDS sits in the hierarchy: GaN FET -> wide-bandgap power device -> discrete semiconductor -> power management. Compared to silicon back-to-back MOSFETs, a monolithic GaN BDS halves the conduction path, reduces parasitic inductance, and removes the body-diode reverse-recovery loss, which is critical at high switching frequencies and in resonant topologies. Key features include 40 V symmetric VDS, monolithic bidirectional blocking without series MOSFETs, normally-off operation for fail-safe start-up, low on-state resistance, 4.4 nC gate charge for low driving loss, and a chip-scale WLCSP 1.2x1.7 mm footprint that maximizes power density on the PCB. The SG-UFWLB-16-2 package is fully Pb-free and RoHS compliant, and the wide-bandgap GaN process supports junction temperatures well above the 150 C silicon limit. Technically, the CoolGaN G3 medium-voltage platform uses a p-GaN gate structure on a silicon substrate, achieving a figure-of-merit that significantly outperforms 40 V silicon MOSFETs. The monolithic construction eliminates the source-to-source connection of two discrete MOSFETs, removing one bond-wire and one package parasitic, which directly reduces ringing, switching loss, and thermal resistance. Typical applications include high-side load switches in USB-PD, eMobility, and battery management, AC solid-state relays and circuit breakers, half-bridge and full-bridge converters in motor drives, and resonant topologies such as LLC and Class-D audio where body-diode recovery would otherwise dominate losses. The bidirectional capability is particularly attractive in battery disconnect units where the device must block both charge and discharge transients. Designers should note that the SG-UFWLB-16-2 package requires careful PCB land-pattern design and inspection - it is a wafer-level chip-scale package, not a conventional QFN. Thermal performance is heavily dependent on PCB copper area, and the gate drive must be a GaN-compatible, low-impedance, split-supply or negative-bias-off driver to ensure robust normally-off behavior and fast switching edges. This page synthesizes distributor stock and pricing, the drop-in alternative landscape (including same-package Infineon GaN BDS variants), and practical design notes not present in the manufacturer datasheet, supporting purchasing and engineering decisions in 2026.
IGL65R080D2XUMA1 - 650V 80mΩ CoolGaN G5 Transistor | Infineon
The Infineon IGL65R080D2XUMA1 is a CoolGaN™ G5 650 V enhancement-mode gallium-nitride (GaN) power transistor in a ThinPAK 8x8 (PG-TSON-8-U06) surface-mount package with wettable flanks. It combines an 80 mΩ typical on-resistance with a 650 V drain-source voltage rating, targets up to 18 A continuous drain current at case temperature, and dissipates up to 81 W. Produced on Infineon's 200 mm GaN-on-Si production line, the device delivers narrow parameter tolerances and ultrafast switching for high-density power conversion. A GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power transistor in which current flows through a two-dimensional electron gas formed at the AlGaN/GaN heterojunction. Compared with silicon MOSFETs in the same voltage class, GaN transistors offer lower on-resistance per unit area, near-zero reverse-recovery charge (Qrr), and switching speeds roughly an order of magnitude faster. These traits enable smaller magnetics, higher switching frequencies, and efficiencies above 98 percent in hard- and soft-switched topologies. GaN HEMTs belong to the broader power-semiconductor family that sits alongside silicon MOSFETs, IGBTs, and SiC MOSFETs. Key features of the IGL65R080D2 include an 80 mΩ typical RDS(on) at 25 °C, a 650 V drain-source breakdown suitable for 400 V PFC boost and half-bridge legs, a low Qoss / Qrr that reduces dead-time losses, and an integrated gate structure compatible with standard 0–10 V gate-drive signals. The PG-TSON-8-U06 package provides a thermally efficient top-side cooling path with wettable flanks for automated optical inspection. The MG-HEMT (metal-gate HEMT) architecture used in CoolGaN G5 keeps the channel normally-off without a cascode structure, simplifying gate-drive design and eliminating the reverse-conduction diode drop of cascode GaN. The 200 mm wafer process supports tight parametric distribution, which is critical for paralleling multiple devices in high-current converters. Typical applications include telecom and server SMPS, USB-PD adapters, totem-pole bridgeless PFC, half-bridge LLC and hard-switched full-bridge converters, and on-board chargers for electric vehicles. Industrial motor drives and photovoltaic inverters in the 1–10 kW range also benefit from the 650 V rating. When designing around this device, select a gate driver rated for the G5 turn-on threshold and place the gate-loop return as close to the source Kelvin connection as possible to avoid false triggering from the power-loop di/dt. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IGLD60R070D1AUMA3 - 600V 70mΩ CoolGaN™ eMode GaN FET | Infineon
The Infineon IGLD60R070D1AUMA3 is a 600V, 70 mΩ enhancement-mode (normally-off) CoolGaN™ gallium-nitride (GaN) power transistor in a surface-mount PG-LSON-8-1 package, delivering continuous drain current of 15 A (Tc) and power dissipation of 114 W (Tc). Built on Infineon's 600 V CoolGaN™ platform, the part offers ultra-low gate charge, near-zero reverse-recovery charge, and sub-nanosecond switching transitions that collapse switching losses against silicon MOSFETs of similar Rds(on). The device is offered in tape-and-reel packaging, qualified to MSL-3, and certified through an extensive GaN-specific qualification process that exceeds industry standards. A GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power switch that conducts through a two-dimensional electron gas formed at the AlGaN/GaN heterojunction, rather than through a doped silicon channel. Because GaN has a 3.4 eV bandgap (versus 1.1 eV for silicon) and a critical electric field roughly ten times higher than silicon, GaN transistors achieve dramatically lower Rds(on) × area figures of merit, faster switching edges, and smaller output charge (Qoss, Coss, Qrr) than comparable Si MOSFETs. Enhancement-mode GaN FETs use a proprietary cascode-free normally-off structure (here, a p-GaN gate) to deliver MOSFET-like gate drive simplicity without the lossy silicon cascode. Within the power-converter hierarchy, the GaN FET sits in the high-frequency switching stage of AC-DC, DC-DC, and PFC converters that ultimately reside inside industrial, telecom, and datacenter SMPS systems. Key features include a 600 V drain-source rating, typical on-resistance of 70 mΩ at VGS=10 V, ultra-low Qrr approaching zero, very low gate charge (Qg), and a thermally efficient exposed-pad LSON-8 package. The combination enables 100 V/ns+ switching transitions, supporting converter switching frequencies in the 100 kHz–1 MHz range and shrinking magnetics by up to 5× versus 65 kHz Si-based designs. Architecturally, the IGLD60R070D1 pairs the GaN die with a Kelvin-source pin in the LSON-8-1 package, eliminating common-source inductance that would otherwise slow switching and cause gate ringing. Process-wise, the die is fabricated on a silicon substrate with a GaN-on-Si epitaxial stack, integrating a Schottky-mode p-GaN gate for normally-off operation. Performance-wise, total gate charge is typically a few nC, allowing the device to be driven from a small isolated gate-driver such as the 1EDI30I12AF or EiceDriver family. Typical applications include totem-pole PFC front ends, half-bridge and full-bridge LLC resonant converters for telecom/datacenter SMPS, high-frequency DC-DC bricks, USB-PD chargers and adapters, and industrial motor-drive auxiliary rails. The 600 V rating makes it well suited to 230 V AC rectified (≈325 V DC) or 380–400 V DC bus designs. When designing with this part, keep the gate-drive loop (gate-driver → RG → gate, and gate-driver return → Kelvin source) as small as possible to exploit the full switching-speed benefit; a 5–10 Ω series gate resistor is typical. Use a half-bridge with proper dead-time control and an isolated gate driver with 4 V/–1 V drive levels for CoolGaN™ to avoid false turn-on. This page synthesizes distributor pricing, drop-in CoolGaN™ alternatives, and practical layout guidance that go beyond the manufacturer datasheet's typical-application section.
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon
The Infineon IGLR70R200D2SXUMA1 is a 700V, 9.3A N-channel Gallium Nitride (GaN) enhancement-mode power transistor in a surface-mount PG-TSON-8-8 package with 200mΩ maximum on-resistance and 34W continuous power dissipation at Tc. It is part of Infineon's CoolGaN™ G5 high-voltage transistor family, built on 200 mm (8 inch) wafer production lines for tight tolerances and high product quality. A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap (WBG) power semiconductor that replaces conventional silicon MOSFETs and IGBTs in switched-mode power conversion. Compared to silicon, GaN transistors offer lower on-resistance per unit area, faster switching edges, zero reverse-recovery charge (Qrr), and smaller magnetic components. Within the semiconductor taxonomy, GaN HEMT sits between silicon MOSFET/IGBT and emerging silicon-carbide (SiC) MOSFETs, occupying the high-frequency, medium-to-high voltage (>600V) sweet spot. Key features include a 1.26nC total gate charge, 91pF output capacitance, 0.21pF reverse-transfer capacitance (Crss), 1.2V gate threshold typical, and a ThinPAK top-side cooling structure that pulls heat out through the PCB copper above the die. The normally-off, E-mode configuration means it behaves like a standard MOSFET from a gate-drive perspective, simplifying driver selection versus cascode GaN. Architecturally, the device uses Infineon's G5 CoolGaN technology, with a Schottky-gate structure and integrated ESD protection. Ultra-low Crss (0.21pF) suppresses the Miller-effect dv/dt-driven turn-on that plagues Si MOSFETs at 400V+ buses, allowing clean switching at multi-hundred-volt transitions without external snubbers. Typical applications include 65W to 140W USB-PD laptop and smartphone adapters, telecom rectifiers, industrial SMPS, totem-pole bridgeless PFC front-ends, and solar micro-inverters. The 700V rating provides substantial 230V AC line margin. Designers choose this device when they need a few hundred kHz switching frequency to shrink magnetics, combined with a single-package, low-inductance footprint for clean gate loops. When designing with this part, place the gate driver within 5mm of the gate pin and keep the power loop inductance below 5nH to preserve the GaN switching-edge advantage. The ThinPAK top-side cooling requires a thermal via-free copper pad directly above the die - not a standard PCB via field - to extract heat into the heatsink or inner copper plane. This page consolidates distributor pricing, drop-in alternatives, and practical design notes not available in the manufacturer datasheet alone, giving the working power-electronics engineer a single decision-ready reference.
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
The Infineon IGLR70R270D2SXUMA1 is a 700V enhancement-mode Gallium Nitride (GaN) power transistor belonging to the CoolGaN™ G5 family, featuring a typical on-state resistance of 270 mΩ and continuous drain current of 7.3 A (Tc), packaged in a thermally-enhanced surface-mount PG-TSON-8-8 outline. A GaN FET (Gallium Nitride Field-Effect Transistor) is a wide-bandgap power semiconductor that uses a GaN-on-silicon heterojunction instead of silicon. Within the power-converter hierarchy, GaN FETs sit between silicon MOSFETs (slower, higher losses) and silicon carbide (SiC) MOSFETs (higher voltage, more expensive); CoolGaN™ specifically targets high-frequency, high-density switched-mode power supplies in the 100-700 V class. The defining characteristics of this part are its 700 V drain-source blocking voltage, 270 mΩ typical RDS(on), and ultrafast switching capability enabled by GaN's absence of a body diode and small gate/output charges. The PG-TSON-8-8 (also referred to as ThinPAK in Infineon literature) is a chip-scale, bottom-source package that minimises parasitic source inductance and provides low thermal resistance from junction to PCB. It is produced on fully-automated 200 mm (8-inch) wafer lines, which translates into tight production tolerances and consistent parametric distributions. Architecturally, CoolGaN™ G5 uses an integrated internal gate diode to simplify gate-drive design and to enable normally-off operation from a standard 0-12 V gate drive. The very low gate charge (Qg) and zero reverse-recovery charge (Qrr) permit hard-switched half-bridge operation at multi-hundred-kilohertz frequencies with substantially lower switching losses than silicon super-junction MOSFETs of similar RDS(on). Typical applications include high-density AC-DC flyback and totem-pole PFC converters, 400 V EV onboard chargers, telecom and server SMPS, USB-PD adapters above 100 W, and photovoltaic micro-inverters. The wide 700 V rating specifically targets universal-mains (85-264 VAC) rectified-bus operation up to 400 V bus rails. When designing with this part, place the gate driver within millimetres of the gate pin to contain the high di/dt loop, and route the source-return of the gate-driver supply directly to the bottom source pad to avoid common-source inductance that would otherwise slow switching and induce unwanted Vgs overshoot. This page consolidates distributor pricing, in-family CoolGaN drop-in alternatives, and practical layout notes that complement (but do not replace) the manufacturer datasheet.
IGLT65R025D2 - 650V CoolGaN G5 e-mode GaN Transistor 25mΩ | Infineon
The Infineon IGLT65R025D2 is a 650 V enhancement-mode gallium-nitride (GaN) power transistor from the CoolGaN™ G5 family, housed in a top-side cooled PG-HDSOP-16-8 (TOLT) surface-mount package. It combines a 650 V drain-source blocking rating with a typical on-state resistance of 25 mΩ and continuous drain current capability of 67 A at case temperature, delivering 219 W of power dissipation for high-density industrial switched-mode power supplies. A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap semiconductor switching device that operates as a normally-off, enhancement-mode transistor. Unlike silicon MOSFETs, GaN transistors use a two-dimensional electron gas channel on a GaN-on-Si substrate, providing much higher switching frequency capability, lower switching losses, zero reverse-recovery charge (Qrr), and superior figure-of-merit (FOM). GaN transistors belong to the wider power semiconductor taxonomy: GaN HEMT → wide-bandgap semiconductor → power discrete → discrete semiconductor. They are increasingly displacing silicon super-junction MOSFETs and IGBTs in high-frequency, high-efficiency conversion. The IGLT65R025D2 features ultra-low gate charge (Qg), a small output capacitance (Coss), and ultrafast switching edges enabled by the low parasitic source-inductance top-side cooled TOLT package. According to the Infineon datasheet, the part supports hard- and soft-switching half-bridge topologies including totem-pole PFC and high-frequency LLC. Compared with a silicon super-junction MOSFET of equivalent Rds(on), the GaN transistor typically reduces switching losses by 60-80% and enables switching frequencies above 1 MHz in compact adapter and charger designs. Typical applications include industrial and telecom SMPS, datacenter AC-DC front ends using totem-pole PFC, high-frequency LLC resonant converters, USB-PD chargers and adapters, and on-board EV charging modules. The wide 650 V rating provides ample margin for 380 VDC bus rails common in three-phase PFC outputs and 400 V EV architectures. When designing with this part, observe the strict gate-drive requirements of e-mode GaN: a tightly regulated 0-6 V drive with respect to source, low loop inductance (< 5 nH), and absence of a body diode mean dead-time must be controlled to avoid shoot-through. Layout the gate drive return directly across the source-kelvin pad to suppress ringing at dV/dt above 100 V/ns. This page synthesizes distributor pricing, drop-in cross-brand GaN equivalents, and practical design considerations not consolidated in the manufacturer datasheet, including pinout mapping for the PG-HDSOP-16-8 TOLT footprint.