IGC019S06S1 - 60V GaN Transistor, 1.3mΩ, PQFN 3x5 | Infineon
Teilenummer: IGC019S06S1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.78 | $37,80 |
| 100 | $3.32 | $332,00 |
| 500 | $2.89 | $1.445,00 |
| 1.000 | $2.55 | $2.550,00 |
IGC019S06S1 Übersicht
GaN (Gallium Nitride) transistors are wide-bandgap power semiconductors that switch much faster and with lower losses than silicon MOSFETs of equivalent Rds(on), enabling smaller magnetics and higher efficiency in switched-mode power conversion. Within the CoolGaN family hierarchy, the 60 V G3 sits between the 100 V/120 V G3 line and the lower-voltage G5 line, targeting point-of-load converters, Class-D audio, and motor-drive applications where switching frequency, dead-time loss, and reverse-conduction behaviour dominate the figure of merit.
Key specifications include 60 V drain-source voltage rating, 1.3 mΩ typical Rds(on), a thermally-enhanced PG-TSON-6-2 (PQFN 3x5) surface-mount package, and integrated gate protection. The normally-off e-mode structure simplifies gate drive (compatible with standard gate-drive ICs) and removes the need for a negative rail. The very low on-state resistance and small package footprint enable high power density designs in 48 V point-of-load, telecom brick, and USB-PD applications.
Technically, the device leverages Infineon's G3 CoolGaN process, which provides an order-of-magnitude lower gate charge (Qg) and output charge (Qoss) than equivalent silicon MOSFETs, dramatically reducing switching-related losses at high frequency. The exposed top metal and source-sense pin arrangement support a Kelvin-source connection for the cleanest gate loop at >100 V/ns switching.
Typical applications include 48 V point-of-load conversion for datacom and AI-server rails, high-efficiency USB-PD chargers, Class-D audio amplifiers, BLDC motor drives, and industrial SMPS where power density and efficiency are primary design drivers.
When designing with the IGC019S06S1, ensure the gate-drive loop is minimised (Kelvin-source connection strongly recommended), input decoupling is placed close to the drain/source pads, and the PCB thermal pad uses adequate copper pour to handle up to 45 W (Tc) dissipation. Avoid exceeding the maximum junction temperature.
This page synthesises distributor pricing, drop-in alternatives and practical design notes not found on the manufacturer product page, delivering engineering-ready context for sourcing and design-in decisions.
Drop-in-Alternativen für IGC019S06S1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IGB019S06S1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IGC015NE60S1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IGC019S06S1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies AG |
| Product Family | CoolGaN™ Transistor 60 V G3 |
| Technology | GaN (Gallium Nitride), e-mode HEMT |
| Drain-Source Voltage (VDS) | 60 V |
| On-State Resistance RDS(on) typical | 1.3 mΩ (some sources list 1.4 mΩ) |
| Continuous Drain Current (Ta) | 27 A |
| Continuous Drain Current (Tc) | 99 A |
| Power Dissipation (Ta) | 3.3 W |
| Power Dissipation (Tc) | 45 W |
| Gehäuse | PG-TSON-6-2 (PQFN 3x5) |
| Configuration | Single N-Channel |
| Montageart | Surface Mount |
| Orderable Part Number | IGC019S06S1XTMA1 |
| RoHS-Status | Compliant |
| Datasheet Revision | Revision 1.1 (2025-02-21) |
IGC019S06S1 Pin-Konfiguration
| Pin 1 | G — Gate |
| Pin 2 | KS — Kelvin-source (tie to source near package to minimise gate-loop inductance) |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | D — Drain (also exposed thermal pad on bottom) |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
IGC019S06S1 ist geeignet für 6 Anwendungs: 48 V Point-of-Load (PoL) Conversion, USB-PD Fast-Charging Adapters, Class-D Audio Amplifiers, BLDC Motor Drives, Telecom Brick / Intermediate Bus Converters, Industrial Switched-Mode Power Supplies (SMPS).
48 V Point-of-Load (PoL) Conversion
The IGC019S06S1 fits 48 V nominal PoL conversion for AI-server and datacom rails. With 60 V VDS rating and 1.3 mΩ typical RDS(on), it provides sufficient transient headroom on a 48 V bus while minimising conduction loss. CoolGaN™ G3's low gate and output charges reduce switching loss at 500 kHz to 1 MHz, enabling small magnetics. Designers should use a Kelvin-source PCB layout, place input MLCCs close to the drain-source pads, and confirm 45 W (Tc) dissipation capability against the copper-pour area on the PCB.
Empfohlen
USB-PD Fast-Charging Adapters
The IGC019S06S1 suits high-power-density USB-PD adapters (100 W and above) where efficiency and size dominate the BOM. According to the Infineon datasheet, the CoolGaN 60 V G3 device supports >500 kHz totem-pole PFC and hard-switched buck stages, dramatically shrinking magnetics. The 1.3 mΩ RDS(on) reduces primary-side conduction loss versus silicon MOSFETs of comparable footprint, while the normally-off e-mode gate structure allows direct drive from standard half-bridge drivers. Verify gate-drive voltage and dv/dt immunity against the adapter's transient profile.
Empfohlen
Class-D Audio Amplifiers
The IGC019S06S1 is well suited to high-fidelity Class-D amplifier output stages. The CoolGaN G3 process delivers very low gate charge and no body-diode reverse-recovery, eliminating the dead-time distortion that limits silicon MOSFET Class-D designs at switching frequencies above 300 kHz. Per the Infineon datasheet, the device can be driven directly by gate-driver ICs in a half-bridge configuration around an audio-modulator IC. Low output capacitance also reduces switching loss at high modulation rates, improving THD+N performance.
Empfohlen
BLDC Motor Drives
The IGC019S06S1 supports BLDC and PMSM motor-drive inverters where high PWM frequency and low switching loss improve torque ripple and acoustic behaviour. With 60 V VDS margin, the device handles 24-36 V battery-fed motors with comfortable transient headroom. The 1.3 mΩ RDS(on) keeps conduction loss low even at high RMS current, and the PQFN 3x5 footprint integrates a thermal pad for direct PCB cooling. Designers should validate the gate-drive loop inductance and add a small RC snubber if motor-cable ringing is observed.
Empfohlen
Telecom Brick / Intermediate Bus Converters
The IGC019S06S1 fits 48 V to point-of-load intermediate bus converters in telecom and AI-server architectures. Its 60 V rating covers 48 V nominal with full transient margin, while the low on-state resistance supports >95% efficiency at full load. CoolGaN™ G3's small Qg × RDS(on) figure of merit beats silicon super-junction MOSFETs, allowing higher switching frequency and therefore smaller output filter inductors. Per Infineon documentation, this part should be paired with an isolated gate driver for safety boundary in brick designs.
Empfohlen
Industrial Switched-Mode Power Supplies (SMPS)
The IGC019S06S1 supports high-efficiency industrial SMPS designs where 48 V or 60 V input rails are common. Per the Infineon datasheet, the CoolGaN 60 V G3 family enables higher switching frequencies (300 kHz to 1 MHz) that shrink magnetics and output capacitance, delivering the small-form-factor designs demanded by factory-automation OEMs. The PQFN 3x5 footprint supports both top-side cooling and PCB thermal-pour cooling, and the e-mode gate structure simplifies driver selection. Pair with an isolated gate driver and PFC front-end for a complete industrial PSU design.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IGC019S06S1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IGB019S06S1 | IGC015NE60S1 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PQFN 3x5 (PG-TSON-6-2) | PQFN 3x5 (PG-TSON-6-2) - same | PQFN 3x5 (PG-TSON-6-2) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 600 V (different VDS class) |
| Technology | CoolGaN™ 60 V G3 e-mode | CoolGaN™ 60 V G3 e-mode | CoolGaN™ e-mode (600 V class) |
Wichtigste Unterscheidungsmerkmale
- Normally-off e-mode gate structure (vs. IGB019S06S1)
- Higher continuous drain current than the 600 V-class member (vs. IGC015NE60S1)
- Very low RDS(on) × Qg figure of merit (vs. Equivalent silicon MOSFETs in 60 V PQFN 3x5)
Designhinweise
Use a Kelvin-source (KS) connection to minimise the gate-drive loop inductance. Per the Infineon datasheet, the KS pin should be tied to the source copper right at the package pad, while the gate-driver ground return should connect to the KS node, not the power-source copper. Estimated: at 100 V/ns switching dV/dt, a 5 nH gate-loop inductance can produce 0.5 V ringing at the gate, so the KS layout is critical for robust switching.
The PQFN 3x5 exposed thermal pad must be soldered to a PCB copper pour of at least 25 mm² to achieve the 45 W (Tc) dissipation capability. Estimated: at 1.3 mΩ RDS(on) and 30 A continuous, conduction loss is roughly 1.17 W; switching loss at 500 kHz adds another 0.5-1 W depending on duty cycle and VDS. Plan copper pour accordingly, and consider top-side cooling if the design is a fully enclosed brick.
Do not drive the IGC019S06S1 gate with voltages exceeding the datasheet VGS maximum (typically +6 V). Excess gate voltage can damage the thin GaN gate oxide. Use a dedicated gate-driver IC (e.g., UCC21530DWKR) with a tightly regulated supply rather than bootstrapping from a silicon-MOSFET driver. Also avoid operating the part in linear mode - the device is fully enhancement-mode and any sustained half-on operation will cause thermal runaway.
Place input and output MLCCs as close as possible to the drain and source pads to minimise switching-node parasitic inductance. The Infineon datasheet recommends a 1-2 oz copper layer on the top side for the high-current path, with the gate-drive copper routed on an inner layer to avoid interference. A 4-layer board (1 oz outer, 0.5 oz inner) is the typical baseline for 500 kHz+ GaN designs.
Compliance-Informationen
RoHS compliant per Infineon product page. Not for sale in China per Infineon. AEC-Q100 status not stated - this is a general-purpose industrial part; AEC-Q100 variants may exist in the same family.
