1EBN1001AEXUMA1 vs 2EDL8034G4CXTMA1 Vergleich

Detaillierter Direktvergleich von 1EBN1001AEXUMA1 von Infineon und 2EDL8034G4CXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EBN1001AEXUMA1 2EDL8034G4CXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,41 $1,55
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) Non-Inverting
Anzahl der Ausgänge 2 (separate source and sink paths) 2
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
Gehäuse PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-VDSON-10-2 (DSN-10) with exposed pad
Montageart Surface Mount Surface Mount
Betriebstemperatur -40 °C to +125 °C (automotive grade) —
Automotive Qualification AEC-Q100 qualified —
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS-Status Compliant —
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Driver Type — Half-Bridge (High-Side / Low-Side)
Bootstrap Voltage (Max) — 120 V
Peak Source Current — 3 A
Peak Sink Current — 4 A
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
Betriebs-Sperrschichttemperatur — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

Datenblätter & Ressourcen

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