1EBN1001AEXUMA1 vs 2EDL8034G4CXTMA1 对比

详细并排对比 1EBN1001AEXUMA1 出自 Infineon 和 2EDL8034G4CXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ 量产中

规格对比

参数 1EBN1001AEXUMA1 2EDL8034G4CXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.41 $1.55
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) Non-Inverting
输出数量 2 (separate source and sink paths) 2
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
封装 PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-VDSON-10-2 (DSN-10) with exposed pad
安装类型 Surface Mount Surface Mount
工作温度 -40 °C to +125 °C (automotive grade) —
Automotive Qualification AEC-Q100 qualified —
MSL 等级 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 状态 Compliant —
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Driver Type — Half-Bridge (High-Side / Low-Side)
Bootstrap Voltage (Max) — 120 V
Peak Source Current — 3 A
Peak Sink Current — 4 A
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
工作结温 — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

数据手册与资源

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