1ED3122MC12HXUMA1 vs 1ED3142MU12FXUMA1 Vergleich

Detaillierter Direktvergleich von 1ED3122MC12HXUMA1 von Infineon und 1ED3142MU12FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1ED3122MC12HXUMA1 1ED3142MU12FXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,92 $0,94
Product Type Isolated Gate Driver (single-channel) Galvanically Isolated Gate Driver IC
Isolation Technology Coreless Transformer (CT) Coreless Transformer (CT)
Isolation Voltage (Vrms) 5.7 kVrms —
Maximum Transient Isolation (Vpk) 8 kVpk —
Output Current (source / sink) 10 A / 9 A —
Configuration High-side, non-inverting —
Number of Channels 1 1
Supply Voltage (VCC / VBS) 8 V to 35 V —
Propagation Delay (typ.) 30 ns —
Rise Time / Fall Time (typ.) 15 ns / 30 ns —
Miller Clamp Active (integrated) —
Short-Circuit Clamping Yes —
UVLO Primary and secondary side —
Betriebstemperatur -40 C to +125 C —
Gehäuse PG-DSO-8-66 (300-mil DSO-8) PG-DSO-8-72 (wide-body DSO-8)
Montageart Surface Mount Surface Mount
MSL-Level 2 —
RoHS-Status Compliant Compliant
Peak Source/Sink Output Current — 6.5 A (typical)
Isolation Voltage (DigiKey rating) — 3000 Vrms
Isolation Voltage (Manufacturer datasheet) — 2300 V
Output Supply Voltage (VCC2-VEE2) — [DATA_NEEDED: max value, typical datasheet 25 V max]
Input Supply Voltage (VCC1) — [DATA_NEEDED: value]
Propagation Delay (typical) — 42 ns
Target Power Switches — SiC MOSFETs, IGBTs, MOSFETs
Betriebstemperaturbereich — [DATA_NEEDED: junction/ambient range]
Protection Features — UVLO (output-side), DESAT short-circuit detection
Output Stage — Separate source/sink pins, totem-pole
Family — Infineon EiceDRIVER 1ED31xx

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