1ED3122MC12HXUMA1 vs 1ED3142MU12FXUMA1 비교

다음의 상세 나란히 비교: 1ED3122MC12HXUMA1 제조: Infineon 및 1ED3142MU12FXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 1ED3122MC12HXUMA1 1ED3142MU12FXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.92 $0.94
Product Type Isolated Gate Driver (single-channel) Galvanically Isolated Gate Driver IC
Isolation Technology Coreless Transformer (CT) Coreless Transformer (CT)
Isolation Voltage (Vrms) 5.7 kVrms —
Maximum Transient Isolation (Vpk) 8 kVpk —
Output Current (source / sink) 10 A / 9 A —
Configuration High-side, non-inverting —
Number of Channels 1 1
Supply Voltage (VCC / VBS) 8 V to 35 V —
Propagation Delay (typ.) 30 ns —
Rise Time / Fall Time (typ.) 15 ns / 30 ns —
Miller Clamp Active (integrated) —
Short-Circuit Clamping Yes —
UVLO Primary and secondary side —
동작 온도 -40 C to +125 C —
패키지 PG-DSO-8-66 (300-mil DSO-8) PG-DSO-8-72 (wide-body DSO-8)
실장 유형 Surface Mount Surface Mount
MSL 레벨 2 —
RoHS 상태 Compliant Compliant
Peak Source/Sink Output Current — 6.5 A (typical)
Isolation Voltage (DigiKey rating) — 3000 Vrms
Isolation Voltage (Manufacturer datasheet) — 2300 V
Output Supply Voltage (VCC2-VEE2) — [DATA_NEEDED: max value, typical datasheet 25 V max]
Input Supply Voltage (VCC1) — [DATA_NEEDED: value]
Propagation Delay (typical) — 42 ns
Target Power Switches — SiC MOSFETs, IGBTs, MOSFETs
동작 온도 범위 — [DATA_NEEDED: junction/ambient range]
Protection Features — UVLO (output-side), DESAT short-circuit detection
Output Stage — Separate source/sink pins, totem-pole
Family — Infineon EiceDRIVER 1ED31xx

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