1ED3142MC12HXUMA1 vs 2ED2106S06FXUMA1 Vergleich
Detaillierter Direktvergleich von 1ED3142MC12HXUMA1 von Infineon und 2ED2106S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | 1ED3142MC12HXUMA1 | 2ED2106S06FXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,32 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Part Number | 1ED3142MC12HXUMA1 | — |
| Product Family | EiceDRIVER X3 Compact | — |
| Driver Type | Isolated single-channel gate driver | — |
| Isolation Technology | Coreless transformer (galvanic) | — |
| Isolation Voltage | 3000 Vrms | — |
| Number of Channels | 1 | — |
| Anzahl der Ausgänge | 2 (separate source/sink) | 2 (1 high-side, 1 low-side) |
| Configuration | Inverting, Non-Inverting | High-Side and Low-Side (Half-Bridge) |
| Source Drive Current | 6 A | — |
| Sink Drive Current | 6.5 A | — |
| Maximum Rise Time | 20 ns | — |
| Maximum Fall Time | 20 ns | — |
| Propagation Delay (typ.) | 40 ns | 100 ns |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | — |
| Gehäuse | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-8-69 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| EU RoHS | Compliant | — |
| Part Status | Active | — |
| ECCN | EAR99 | — |
| Offset Voltage (Voffset max) | — | 650 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Input Logic Compatibility | — | CMOS, TTL |
| Number of Drivers | — | 2 |
| Anzahl der Pins | — | 8 |
| Bootstrap Diode | — | Integrated |
| Betriebstemperaturbereich | — | -40C to +125C |
| Packaging | — | Tape & Reel |
| Ausgangstyp | — | Half-Bridge, Non-Inverting |