1ED3323MC12NXUMA1 vs 1ED3124MU12HXUMA1 Vergleich
Detaillierter Direktvergleich von 1ED3323MC12NXUMA1 von Infineon und 1ED3124MU12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 1ED3323MC12NXUMA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,25 | $0,89 |
| Funktion | Single-channel isolated gate driver | — |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Peak Source Current | 8.5 A | — |
| Peak Sink Current | 9 A | — |
| Number of Channels | 1 | — |
| Primary-Side Supply Voltage (VDD1) | 3.1 V to 5.5 V | — |
| Secondary-Side Supply Voltage (VCC2) | 9 V to 18 V | — |
| Propagation Delay (typ) | 85 ns | — |
| Common-Mode Transient Immunity (CMTI) | [DATA_NEEDED: CMTI in kV/us] | 200 kV/us minimum |
| Protection Features | DESAT short-circuit, soft-off, Miller clamp, UVLO | — |
| Betriebstemperaturbereich | -40 C to +125 C | -40C to +125C |
| Gehäuse | PG-DSO-16-40 | PG-DSO-8-66 (DSO-8 wide-body) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL2 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Family | EiceDRIVER F3 Enhanced (1ED332x) | — |
| Isolation Technology | Coreless Transformer (CT) | Coreless transformer (CT) |
| Product Type | — | Single-channel isolated gate driver IC |
| Manufacturer Family | — | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | — | 14 A typical |
| Ausgangskonfiguration | — | Separate source and sink pins |
| Galvanic Isolation (rms) | — | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | — | 1200 V |
| Propagation Delay (typ.) | — | 90 ns |
| UVLO Threshold | — | 10.5 V |
| Creepage Distance | — | >8 mm |
| Target Switch Types | — | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | — | Up to 2300 V IGBT / SiC modules |