1ED3323MC12NXUMA1 vs 1ED3124MU12HXUMA1 Comparación
Comparación detallada lado a lado de 1ED3323MC12NXUMA1 por Infineon y 1ED3124MU12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1ED3323MC12NXUMA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,25 | $0,89 |
| Función | Single-channel isolated gate driver | — |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Peak Source Current | 8.5 A | — |
| Peak Sink Current | 9 A | — |
| Number of Channels | 1 | — |
| Primary-Side Supply Voltage (VDD1) | 3.1 V to 5.5 V | — |
| Secondary-Side Supply Voltage (VCC2) | 9 V to 18 V | — |
| Propagation Delay (typ) | 85 ns | — |
| Common-Mode Transient Immunity (CMTI) | [DATA_NEEDED: CMTI in kV/us] | 200 kV/us minimum |
| Protection Features | DESAT short-circuit, soft-off, Miller clamp, UVLO | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C | -40C to +125C |
| Encapsulado | PG-DSO-16-40 | PG-DSO-8-66 (DSO-8 wide-body) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | MSL2 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Family | EiceDRIVER F3 Enhanced (1ED332x) | — |
| Isolation Technology | Coreless Transformer (CT) | Coreless transformer (CT) |
| Product Type | — | Single-channel isolated gate driver IC |
| Manufacturer Family | — | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | — | 14 A typical |
| Configuración de salida | — | Separate source and sink pins |
| Galvanic Isolation (rms) | — | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | — | 1200 V |
| Propagation Delay (typ.) | — | 90 ns |
| UVLO Threshold | — | 10.5 V |
| Creepage Distance | — | >8 mm |
| Target Switch Types | — | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | — | Up to 2300 V IGBT / SiC modules |