1ED44175N01BXTSA1 vs 2EDN7434RXTMA1 Vergleich

Detaillierter Direktvergleich von 1ED44175N01BXTSA1 von Infineon und 2EDN7434RXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1ED44175N01BXTSA1 2EDN7434RXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,54 $0,34
Funktion Low-side gate driver —
Number of Channels 1 —
Gate Type IGBT, MOSFET (single-channel) —
Configuration Non-inverting —
Output Current (Source/Sink) 2.6 A typical —
Supply Voltage Range Up to 25 V [DATA_NEEDED: VDD range]
Logic Input Compatibility CMOS, LSTTL —
Over-Current Protection (OCP) Integrated (OCP pin) —
FAULT Output Yes (status reporting) —
Enable-Pin Yes —
Rise/Fall Time [DATA_NEEDED: rise/fall time ns] —
Propagation Delay [DATA_NEEDED: propagation delay ns] —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature]
Gehäuse PG-SOT23-6-3 (6-lead) PG-TSSOP-8 (3.0 x 3.0 mm)
Montageart Surface Mount Surface Mount
Technology CMOS (latch-up immune) —
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — EiceDRIVER 2EDN
Driver Configuration — Dual-channel low-side
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Rated Output Current — 4 A
Output Resistance (Low) — [DATA_NEEDED: output resistance Ron low]
Output Resistance (High) — [DATA_NEEDED: output resistance Ron high]
Propagation Delay (Typ.) — 19 ns
Input Logic Compatibility — LV-TTL, non-inverting
Absolute Max Input Voltage — -12 V to +22 V
Active Output Voltage Clamping — Yes

Datenblätter & Ressourcen

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