1EDI3033ASXUMA1 vs 1EDN7136UXTSA1 Vergleich

Detaillierter Direktvergleich von 1EDI3033ASXUMA1 von Infineon und 1EDN7136UXTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDI3033ASXUMA1 1EDN7136UXTSA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,21 $0,74
Funktion Isolated single-channel gate driver High-side / Low-side gate driver IC
Technology Coreless transformer isolation —
Output Current (Source/Sink) 12 A typical —
Isolation Voltage (Vrms) 5700 Vrms —
Number of Channels 1 —
Propagation Delay 60 ns typical —
Target Power Device SiC MOSFET, IGBT —
Gehäuse PG-DSO-20-91 (wide-body) TSNP-6 with exposed pad (PG-VSON-1)
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Betriebstemperatur -40 C to +125 C —
Short-Circuit Protection DESAT with programmable blanking —
Miller Clamp Active Miller clamp integrated —
Bootstrap Diode Integrated —
Functional Safety ISO 26262 ASIL D ready —
Creepage Distance 8 mm (typical for wide-body DSO-20) —
Montageart Surface Mount Surface Mount
Compliance RoHS compliant —
Driven Device Type — GaN HEMT, N-channel MOSFET
Anzahl der Ausgänge — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
Betriebstemperaturbereich — -40 C to +150 C
RoHS-Status — Compliant
Lead-Free — Yes
Halogenfrei — Yes (per Infineon product family convention)
MSL-Level — [DATA_NEEDED: MSL rating]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern