1EDI3033ASXUMA1 vs 1EDN7136UXTSA1 对比

详细并排对比 1EDI3033ASXUMA1 出自 Infineon 和 1EDN7136UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1EDI3033ASXUMA1 1EDN7136UXTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.21 $0.74
功能 Isolated single-channel gate driver High-side / Low-side gate driver IC
Technology Coreless transformer isolation —
Output Current (Source/Sink) 12 A typical —
Isolation Voltage (Vrms) 5700 Vrms —
Number of Channels 1 —
Propagation Delay 60 ns typical —
Target Power Device SiC MOSFET, IGBT —
封装 PG-DSO-20-91 (wide-body) TSNP-6 with exposed pad (PG-VSON-1)
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
工作温度 -40 C to +125 C —
Short-Circuit Protection DESAT with programmable blanking —
Miller Clamp Active Miller clamp integrated —
Bootstrap Diode Integrated —
Functional Safety ISO 26262 ASIL D ready —
Creepage Distance 8 mm (typical for wide-body DSO-20) —
安装类型 Surface Mount Surface Mount
Compliance RoHS compliant —
Driven Device Type — GaN HEMT, N-channel MOSFET
输出数量 — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
工作温度范围 — -40 C to +150 C
RoHS 状态 — Compliant
Lead-Free — Yes
无卤 — Yes (per Infineon product family convention)
MSL 等级 — [DATA_NEEDED: MSL rating]

数据手册与资源

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