1EDI60H12AHXUMA1 vs 1ED3124MC12HXUMA1 Vergleich
Detaillierter Direktvergleich von 1EDI60H12AHXUMA1 von Infineon und 1ED3124MC12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | 1EDI60H12AHXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,18 | $1,45 |
| Product Type | Single-channel high-side gate driver IC | — |
| Isolation Technology | Galvanic isolation via coreless transformer | Magnetic coupling (coreless transformer) |
| Isolation Voltage Rating | 1200 V | — |
| Number of Channels | 1 | — |
| Peak Source Current (typ.) | 10.0 A | — |
| Peak Sink Current (typ.) | 9.4 A | — |
| Ausgangskonfiguration | Separate source and sink (SEP) outputs | — |
| Input Compatibility | CMOS / TTL logic | — |
| Driven Device | IGBT (and MOSFET / SiC compatible) | — |
| Gehäuse | PG-DSO-8-59 (DSO-8 with 8 mm creepage) | PG-DSO-8 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| Creepage Distance | 8 mm | — |
| Short-Circuit Protection | Short-circuit clamping | — |
| MSL-Level | 2 (1 year floor life) | — |
| RoHS-Status | Compliant | Compliant |
| Betriebstemperatur | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | -40 C to +125 C |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Anzahl der Ausgänge | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Anstiegszeit | — | 15 ns |
| Abfallzeit | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |