1EDI60N12AFXUMA1 vs 1EDB7275FXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDI60N12AFXUMA1 von Infineon und 1EDB7275FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDI60N12AFXUMA1 1EDB7275FXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,21 $1,68
Driver Configuration Single high-side, galvanically isolated —
Number of Channels 1 —
Isolation Type Magnetic (coreless transformer) —
Isolation Voltage 1200 V working voltage —
Maximum Output Voltage 40 V —
Source Current (typ.) 10 A —
Sink Current (typ.) 9.4 A —
Supply Voltage (VDD) 3.1 V to 17 V —
Propagation Delay (typ.) 120 ns —
Input Logic Compatibility 3.3 V and 5 V CMOS/TTL —
Creepage Distance (min.) 4 mm —
Short-Circuit Clamping Yes (separate sink/source outputs) —
Betriebstemperatur -40C to +125C —
Gehäuse PG-DSO-8-51 (DSO-8) PG-DSO-8 (150 mil DSO, 8-pin)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL rating] —
RoHS-Status Compliant Compliant
Product Type — Single-channel isolated gate driver IC
Topology Supported — High-side / low-side, half-bridge (with two parts)
Isolation Technology — Coreless transformer (CT) magnetic coupling
Isolation Voltage (Viso) — 3000 Vrms
Common-Mode Transient Immunity (CMTI) — 300 V/ns (minimum)
Peak Source Output Current — 5.4 A (typical)
Peak Sink Output Current — 9.8 A (typical)
Propagation Delay — +6 / -4 ns (typical, see datasheet family)
Supported Switch Technologies — Si MOSFET, SiC MOSFET, GaN HEMT
Betriebstemperaturbereich — [DATA_NEEDED: full operating temperature range]
UVLO Protection — Yes (secondary side)
Marking Code — 1B7275A

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