1EDN7116GXTMA1 vs 1ED3122MC12HXUMA1 Vergleich
Detaillierter Direktvergleich von 1EDN7116GXTMA1 von Infineon und 1ED3122MC12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN7116GXTMA1 | 1ED3122MC12HXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,84 | $1,92 |
| Funktion | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | — |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | — |
| Peak Sink Current | 4 A (typ) | — |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | Active (integrated) |
| UVLO | Yes (VCC and gate-rail monitored) | Primary and secondary side |
| Betriebstemperaturbereich | -40 °C to +125 °C | — |
| Gehäuse | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-DSO-8-66 (300-mil DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL3 | 2 |
| RoHS-Status | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Product Type | — | Isolated Gate Driver (single-channel) |
| Isolation Technology | — | Coreless Transformer (CT) |
| Isolation Voltage (Vrms) | — | 5.7 kVrms |
| Maximum Transient Isolation (Vpk) | — | 8 kVpk |
| Output Current (source / sink) | — | 10 A / 9 A |
| Configuration | — | High-side, non-inverting |
| Number of Channels | — | 1 |
| Supply Voltage (VCC / VBS) | — | 8 V to 35 V |
| Propagation Delay (typ.) | — | 30 ns |
| Rise Time / Fall Time (typ.) | — | 15 ns / 30 ns |
| Short-Circuit Clamping | — | Yes |
| Betriebstemperatur | — | -40 C to +125 C |