1EDN7116GXTMA1 vs 1ED3122MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 1ED3122MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveInfineon
1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon
1ED3122MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7116GXTMA1 | 1ED3122MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $1.92 |
| Function | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | β |
| Driver Configuration | Non-inverting, single low-side | β |
| Number of Drivers | 1 | β |
| Peak Source Current | 2 A (typ) | β |
| Peak Sink Current | 4 A (typ) | β |
| Input Type | Truly Differential Input (TDI) | β |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | β |
| Switch-Node Blocking Voltage | 200 V (max) | β |
| Propagation Delay (Typ) | 9 ns | β |
| Rise Time (Typ) | 3 ns | β |
| Fall Time (Typ) | 3 ns | β |
| Quiescent Current (Typ) | 0.6 mA | β |
| Miller Clamp | Integrated, active | Active (integrated) |
| UVLO | Yes (VCC and gate-rail monitored) | Primary and secondary side |
| Operating Temperature Range | -40 Β°C to +125 Β°C | β |
| Package | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) | PG-DSO-8-66 (300-mil DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL3 | 2 |
| RoHS Status | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | β |
| Product Type | β | Isolated Gate Driver (single-channel) |
| Isolation Technology | β | Coreless Transformer (CT) |
| Isolation Voltage (Vrms) | β | 5.7 kVrms |
| Maximum Transient Isolation (Vpk) | β | 8 kVpk |
| Output Current (source / sink) | β | 10 A / 9 A |
| Configuration | β | High-side, non-inverting |
| Number of Channels | β | 1 |
| Supply Voltage (VCC / VBS) | β | 8 V to 35 V |
| Propagation Delay (typ.) | β | 30 ns |
| Rise Time / Fall Time (typ.) | β | 15 ns / 30 ns |
| Short-Circuit Clamping | β | Yes |
| Operating Temperature | β | -40 C to +125 C |