1EDN7116GXTMA1 vs 1EDN7512GXTMA1 Vergleich
Detaillierter Direktvergleich von 1EDN7116GXTMA1 von Infineon und 1EDN7512GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN7116GXTMA1 | 1EDN7512GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,84 | $0,82 |
| Funktion | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Low-side gate driver, single channel |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 4 A |
| Peak Sink Current | 4 A (typ) | 8 A |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | [DATA_NEEDED: UVLO threshold] |
| Betriebstemperaturbereich | -40 °C to +125 °C | -40 C to +125 C |
| Gehäuse | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-WSON-6-1 (6-pin WSON with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL3 | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Anzahl der Ausgänge | — | 1 |
| Logic Inputs | — | Inverting and Non-Inverting |
| Propagation Delay (typical) | — | 19 ns |
| Eingangsspannungsbereich | — | [DATA_NEEDED: VCC range] |
| Input Robustness (negative) | — | -10 V |
| Anstiegszeit | — | [DATA_NEEDED: typical tr] |
| Abfallzeit | — | [DATA_NEEDED: typical tf] |
| Lead-Free | — | Yes |