1EDN7136UXTSA1 vs 1EDI3033ASXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDN7136UXTSA1 von Infineon und 1EDI3033ASXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDN7136UXTSA1 1EDI3033ASXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $4,21
Funktion High-side / Low-side gate driver IC Isolated single-channel gate driver
Driven Device Type GaN HEMT, N-channel MOSFET —
Anzahl der Ausgänge 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Betriebstemperaturbereich -40 C to +150 C —
Gehäuse TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-20-91 (wide-body)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Lead-Free Yes —
Halogenfrei Yes (per Infineon product family convention) —
MSL-Level [DATA_NEEDED: MSL rating] —
Technology — Coreless transformer isolation
Output Current (Source/Sink) — 12 A typical
Isolation Voltage (Vrms) — 5700 Vrms
Number of Channels — 1
Propagation Delay — 60 ns typical
Target Power Device — SiC MOSFET, IGBT
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Betriebstemperatur — -40 C to +125 C
Short-Circuit Protection — DESAT with programmable blanking
Miller Clamp — Active Miller clamp integrated
Bootstrap Diode — Integrated
Functional Safety — ISO 26262 ASIL D ready
Creepage Distance — 8 mm (typical for wide-body DSO-20)
Compliance — RoHS compliant

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