1EDN7136UXTSA1 vs 1EDI3033ASXUMA1 비교

다음의 상세 나란히 비교: 1EDN7136UXTSA1 제조: Infineon 및 1EDI3033ASXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 1EDN7136UXTSA1 1EDI3033ASXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.74 $4.21
기능 High-side / Low-side gate driver IC Isolated single-channel gate driver
Driven Device Type GaN HEMT, N-channel MOSFET —
출력 수 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
동작 온도 범위 -40 C to +150 C —
패키지 TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-20-91 (wide-body)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant —
Lead-Free Yes —
할로겐 프리 Yes (per Infineon product family convention) —
MSL 레벨 [DATA_NEEDED: MSL rating] —
Technology — Coreless transformer isolation
Output Current (Source/Sink) — 12 A typical
Isolation Voltage (Vrms) — 5700 Vrms
Number of Channels — 1
Propagation Delay — 60 ns typical
Target Power Device — SiC MOSFET, IGBT
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
동작 온도 — -40 C to +125 C
Short-Circuit Protection — DESAT with programmable blanking
Miller Clamp — Active Miller clamp integrated
Bootstrap Diode — Integrated
Functional Safety — ISO 26262 ASIL D ready
Creepage Distance — 8 mm (typical for wide-body DSO-20)
Compliance — RoHS compliant

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청