1EDN7136UXTSA1 vs 1EDN7116GXTMA1 Vergleich
Detaillierter Direktvergleich von 1EDN7136UXTSA1 von Infineon und 1EDN7116GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN7136UXTSA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $0,84 |
| Funktion | High-side / Low-side gate driver IC | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Anzahl der Ausgänge | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | 2 A (typ) |
| Peak Sink Current | 2 A | 4 A (typ) |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | Truly Differential Input (TDI) |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | 9 ns |
| Betriebstemperaturbereich | -40 C to +150 C | -40 °C to +125 °C |
| Gehäuse | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogenfrei | Yes (per Infineon product family convention) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL3 |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |