1EDN7136UXTSA1 vs 2EDR8258XXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDN7136UXTSA1 von Infineon und 2EDR8258XXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1EDN7136UXTSA1 2EDR8258XXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $0,74
Funktion High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
Anzahl der Ausgänge 2 (high-side and low-side) 2 (high-side and low-side, half-bridge)
Peak Source Current 1 A 5 A
Peak Sink Current 2 A 9 A
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Betriebstemperaturbereich -40 C to +150 C -40 °C to +125 °C
Gehäuse TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-14 (14-pin)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Lead-Free Yes —
Halogenfrei Yes (per Infineon product family convention) —
MSL-Level [DATA_NEEDED: MSL rating] —
Product Type — Isolated single-channel gate driver
Isolation Technology — Magnetic (coreless transformer) coupling
Number of Channels — 1
Galvanic Isolation (rms) — 5700 Vrms
Galvanic Isolation (peak) — 8000 Vpk
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay (typical) — 38 ns
Driver Supply Voltage (VCC, VBS) — 8 V to 20 V
Input Supply Voltage (VDD) — 3 V to 5.5 V
Protection Features — UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection
Logic Input — Non-inverting, CMOS compatible

Datenblätter & Ressourcen

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