1EDN7136UXTSA1 vs 2EDR8258XXUMA1 비교

다음의 상세 나란히 비교: 1EDN7136UXTSA1 제조: Infineon 및 2EDR8258XXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 1EDN7136UXTSA1 2EDR8258XXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.74 $0.74
기능 High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
출력 수 2 (high-side and low-side) 2 (high-side and low-side, half-bridge)
Peak Source Current 1 A 5 A
Peak Sink Current 2 A 9 A
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
동작 온도 범위 -40 C to +150 C -40 °C to +125 °C
패키지 TSNP-6 with exposed pad (PG-VSON-1) PG-DSO-14 (14-pin)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
Lead-Free Yes —
할로겐 프리 Yes (per Infineon product family convention) —
MSL 레벨 [DATA_NEEDED: MSL rating] —
Product Type — Isolated single-channel gate driver
Isolation Technology — Magnetic (coreless transformer) coupling
Number of Channels — 1
Galvanic Isolation (rms) — 5700 Vrms
Galvanic Isolation (peak) — 8000 Vpk
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay (typical) — 38 ns
Driver Supply Voltage (VCC, VBS) — 8 V to 20 V
Input Supply Voltage (VDD) — 3 V to 5.5 V
Protection Features — UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection
Logic Input — Non-inverting, CMOS compatible

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청