1EDN7146UXTSA1 vs 1ED3124MC12HXUMA1 Vergleich
Detaillierter Direktvergleich von 1EDN7146UXTSA1 von Infineon und 1ED3124MC12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN7146UXTSA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $1,45 |
| Driver Type | Single-channel high-side TDI gate driver | — |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| Anstiegszeit | [DATA_NEEDED: typical rise time ns] | 15 ns |
| Abfallzeit | [DATA_NEEDED: typical fall time ns] | 30 ns |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| Betriebstemperaturbereich | -40C to +125C | — |
| Gehäuse | PG-VSON-1 (6-pin with exposed pad) | PG-DSO-8 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | Compliant |
| Topology Support | Half-bridge, low-side, high-side | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Anzahl der Ausgänge | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Betriebstemperatur | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |