1EDN7146UXTSA1 vs 1ED3124MC12HXUMA1 对比
详细并排对比 1EDN7146UXTSA1 出自 Infineon 和 1ED3124MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7146UXTSA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $1.45 |
| Driver Type | Single-channel high-side TDI gate driver | — |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| 上升时间 | [DATA_NEEDED: typical rise time ns] | 15 ns |
| 下降时间 | [DATA_NEEDED: typical fall time ns] | 30 ns |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| 工作温度范围 | -40C to +125C | — |
| 封装 | PG-VSON-1 (6-pin with exposed pad) | PG-DSO-8 (DSO-8) |
| 安装类型 | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Topology Support | Half-bridge, low-side, high-side | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| 输出数量 | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| 工作温度 | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |