1EDN7550BXTSA1 vs 1EDN7146GXTMA1 Vergleich
Detaillierter Direktvergleich von 1EDN7550BXTSA1 von Infineon und 1EDN7146GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
1EDN7550BXTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | 1EDN7550BXTSA1 | 1EDN7146GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,59 | $1,05 |
| Driver Configuration | Single-channel, high-side / low-side | — |
| Input Type | Non-inverting, truly differential | TDI (Truly Differential Inductor) |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 8 A | — |
| Supply Voltage (VDD max) | 84 V | — |
| Minimum Input Pulse Width | 29 ns | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay value] | — |
| Input Common-Mode Range | Up to 150 V | — |
| Channel-to-Channel Matching | 1.0 ns typ. | — |
| Internal Regulator | 4.7 V on input side | — |
| Logic Input Compatibility | TTL / CMOS | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Betriebs-Sperrschichttemperatur | -40 °C to +150 °C | — |
| Gehäuse | PG-SOT23-6 (SOT-23-6) | PG-VSON-10-4 |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS-Status | Compliant | Compliant |
| Driver Type | — | High-side, single-channel |
| Number of Drivers | — | 1 |
| Logic Type | — | Non-Inverting |
| Maximum Bootstrap Voltage (VB) | — | 200 V |
| Supply Voltage (VCC) | — | 4.5 V to 20 V |
| Source/Sink Drive Current | — | 500 mA / 500 mA |
| Gate Drive Voltage | — | Up to 11 V (typ) |
| Propagation Delay (typ) | — | 40 ns |
| Rise/Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| UVLO (VCC) | — | Yes |
| UVLO (VB) | — | Yes |
| Bootstrap Diode | — | Integrated |
| Betriebstemperatur | — | -40 C to +125 C |