2ED2103S06FXUMA1 vs 2EDL8034G4CXTMA1 Vergleich

Detaillierter Direktvergleich von 2ED2103S06FXUMA1 von Infineon und 2EDL8034G4CXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2ED2103S06FXUMA1 2EDL8034G4CXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,94 $1,55
Funktion Half-Bridge Gate Driver —
Configuration Non-Inverting Non-Inverting
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V 120 V
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Gehäuse PG-DSO-8-69 (DSO-8 with exposed pad) PG-VDSON-10-2 (DSN-10) with exposed pad
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40C to +125C —
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS-Status Compliant —
Driver Type — Half-Bridge (High-Side / Low-Side)
Peak Source Current — 3 A
Peak Sink Current — 4 A
Anzahl der Ausgänge — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
Betriebs-Sperrschichttemperatur — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

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