2ED2103S06FXUMA1 vs 2EDL8034G4CXTMA1 比較

詳細な並列比較: 2ED2103S06FXUMA1 メーカー: Infineon および 2EDL8034G4CXTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 生産中
Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ 生産中

仕様比較

パラメータ 2ED2103S06FXUMA1 2EDL8034G4CXTMA1
ブランド Infineon Infineon
カテゴリ Power MOSFET Drivers Power MOSFET Drivers
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.94 $1.55
機能 Half-Bridge Gate Driver —
Configuration Non-Inverting Non-Inverting
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V 120 V
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
パッケージ PG-DSO-8-69 (DSO-8 with exposed pad) PG-VDSON-10-2 (DSN-10) with exposed pad
実装タイプ Surface Mount Surface Mount
動作温度範囲 -40C to +125C —
MSLレベル [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS ステータス Compliant —
Driver Type — Half-Bridge (High-Side / Low-Side)
Peak Source Current — 3 A
Peak Sink Current — 4 A
出力数 — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
動作接合温度 — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

データシート&リソース

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