2ED2738S01GXTMA1 vs IR2110SPBF Vergleich

Detaillierter Direktvergleich von 2ED2738S01GXTMA1 von Infineon und IR2110SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2ED2738S01GXTMA1 IR2110SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,95 $1,98
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Output Current (Source, peak) 4.0 A —
Output Current (Sink, peak) 8.0 A —
Output Current (Source, typ) 1.0 A —
Output Current (Sink, typ) 2.0 A —
Anzahl der Ausgänge 1 —
Input Type Non-Inverting —
Input Logic Compatibility TTL —
Supply Voltage (VDD/VCC) 6 V to 20 V —
Bootstrap Supply Voltage Up to 600 V (HS pin rating) —
Propagation Delay (typ) 120 ns —
Channel-to-Channel Match 40 ns —
Rise/Fall Time (1 nF load) 1.5 ns / 1.5 ns —
Negative Transient Immunity (HS) -10 V to +20 V transient —
Under-Voltage Lockout VCC and Bootstrap —
Bootstrap Diode Integrated Integrated
Betriebstemperatur -40C to +125C —
Gehäuse PG-VSON-10-5 (3x3 mm) with EP 16-pin SOIC (SO-16, DW suffix)
Montageart Surface Mount Surface Mount
MSL-Level 2 (1 year) —
RoHS-Status Compliant —
Funktion — Half-bridge gate driver
Topologie — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Logic Input Compatibility — 3.3 V CMOS / LSTTL
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
Betriebstemperaturbereich — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

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