2ED2738S01GXTMA1 vs IR2110SPBF 비교

다음의 상세 나란히 비교: 2ED2738S01GXTMA1 제조: Infineon 및 IR2110SPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 2ED2738S01GXTMA1 IR2110SPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.95 $1.98
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Output Current (Source, peak) 4.0 A —
Output Current (Sink, peak) 8.0 A —
Output Current (Source, typ) 1.0 A —
Output Current (Sink, typ) 2.0 A —
출력 수 1 —
Input Type Non-Inverting —
Input Logic Compatibility TTL —
Supply Voltage (VDD/VCC) 6 V to 20 V —
Bootstrap Supply Voltage Up to 600 V (HS pin rating) —
Propagation Delay (typ) 120 ns —
Channel-to-Channel Match 40 ns —
Rise/Fall Time (1 nF load) 1.5 ns / 1.5 ns —
Negative Transient Immunity (HS) -10 V to +20 V transient —
Under-Voltage Lockout VCC and Bootstrap —
Bootstrap Diode Integrated Integrated
동작 온도 -40C to +125C —
패키지 PG-VSON-10-5 (3x3 mm) with EP 16-pin SOIC (SO-16, DW suffix)
실장 유형 Surface Mount Surface Mount
MSL 레벨 2 (1 year) —
RoHS 상태 Compliant —
기능 — Half-bridge gate driver
토폴로지 — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Logic Input Compatibility — 3.3 V CMOS / LSTTL
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
동작 온도 범위 — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청