2EDL6014ACG2DXTMA1 vs 2EDL900G3XTMA1 Vergleich

Detaillierter Direktvergleich von 2EDL6014ACG2DXTMA1 von Infineon und 2EDL900G3XTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL6014ACG2DXTMA1 2EDL900G3XTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,18 $2,20
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2 (high-side + low-side)
Ausgangskonfiguration Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Betriebstemperatur -40 C to +125 C —
Gehäuse 11-WQFN (2.2 x 2.2 mm) with exposed pad TSNP-16 (3x3 mm) with exposed pad
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) Junction isolation (JI), 120 V
Montageart Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Peak Source Current — 4 A
Peak Sink Current — 6 A
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Input Logic Compatibility — 3.3 V / 5 V / TTL (per datasheet)
Betriebstemperaturbereich — -40 C to +125 C
MSL-Level — 1
RoHS-Status — Compliant

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