2EDL6014ACG2DXTMA1 vs 2EDL900G3XTMA1 Comparison

Detailed side-by-side comparison of 2EDL6014ACG2DXTMA1 by Infineon and 2EDL900G3XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDL6014ACG2DXTMA1 2EDL900G3XTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2 (high-side + low-side)
Output Configuration Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Operating Temperature -40 C to +125 C —
Package 11-WQFN (2.2 x 2.2 mm) with exposed pad TSNP-16 (3x3 mm) with exposed pad
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) Junction isolation (JI), 120 V
Mounting Type Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Peak Source Current — 4 A
Peak Sink Current — 6 A
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Input Logic Compatibility — 3.3 V / 5 V / TTL (per datasheet)
Operating Temperature Range — -40 C to +125 C
MSL Level — 1
RoHS Status — Compliant

Datasheets & Resources

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