2EDR7259XXUMA1 vs 1ED020I12B2XUMA1 Vergleich

Detaillierter Direktvergleich von 2EDR7259XXUMA1 von Infineon und 1ED020I12B2XUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDR7259XXUMA1 1ED020I12B2XUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,98 $2,65
Product Type Isolated Gate Driver IC —
Topologie Dual-channel, half-bridge independent outputs —
Isolation Technology Magnetic (coreless transformer) coupling Coreless transformer (magnetic coupling)
Number of Channels 2 1
Peak Source Current (typ.) 5 A —
Peak Sink Current (typ.) 9 A —
Isolation Voltage (Vrms) 5700 Vrms 4500 Vrms
Transient Withstanding Voltage 8000 Vpk (per Infineon family datasheet) —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typ.) 38 ns 35 ns
Channel-to-Channel Delay Match [DATA_NEEDED: ns value] —
UVLO Yes, independent per channel —
Logic Supply (VCC) 3.3 V or 5 V —
Betriebstemperaturbereich -40 °C to +125 °C —
Gehäuse PG-DSO-14 (narrow body) PG-DSO-16-15 (300 mil wide-body DSO-16)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
AEC-Q100 [DATA_NEEDED: automotive grade status] —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
Betriebstemperatur — -40 °C to +125 °C
MSL-Level — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

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