2EDR7259XXUMA1 - 5A/9A Isolated Gate Driver 5700Vrms | Infineon
Teilenummer: 2EDR7259XXUMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.15 | $575,00 |
| 1.000 | $0.98 | $980,00 |
2EDR7259XXUMA1 Übersicht
Key features include 38 ns typical propagation delay with tight channel-to-channel matching, integrated undervoltage lockout (UVLO) for both driver rails, and functional isolation reinforcement per IEC 60747-17/VDE 0884-11. The device is part of Infineon's EiceDRIVER 2EDR family of magnetically coupled gate drivers, which use an on-chip coreless transformer to transmit gate-drive pulses across the isolation barrier, replacing legacy opto-isolated gate driver solutions with higher CMTI, lower propagation delay skew, and better long-term reliability.
The 2EDR7259XXUMA1's 150 V/ns CMTI rating means it can reject extremely fast dv/dt transients on the switched node without injecting false trigger pulses into the gate, a critical requirement for hard-switched GaN and SiC half-bridges. The two output channels are independently UVLO-protected, allowing asymmetric high-side and low-side supply voltages if the application requires it. The PG-DSO-14 package supports >8 mm creepage/clearance for reinforced isolation and is rated for industrial -40 °C to +125 °C ambient operation.
Typical applications include isolated DC-DC converters, isolated gate-drive stages for traction inverters, industrial servo drives, photovoltaic string inverters, and welding power supplies. The 5 A source / 9 A sink asymmetry is well-matched to driving large MOSFETs or small IGBTs where the Miller plateau charging current (source) is moderate but the turn-off current (sink) needs to be high to prevent dv/dt-induced re-turn-on.
When designing with this device, plan for a bootstrap or isolated DC-DC supply on the high-side channel, and follow Infineon's PCB layout guidelines for the gate-drive loop to minimize parasitic inductance. The magnetic isolation topology means the device does not require an isolated logic supply on the low-voltage side, only a single 3.3 V or 5 V VCC rail.
This page synthesizes distributor pricing, drop-in and same-family alternatives, and practical gate-drive design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für 2EDR7259XXUMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit 2EDR7259XXUMA1 (gleiche Bauform und Footprint) – abweichend in Package, Isolation Technology, Product Type, Number of Outputs, Operating Temperature.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
2EDB7259KXUMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1.22 / Stück
Datenblatt ansehen →2EDR8258XXUMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.74 / Stück
Datenblatt ansehen →1ED020I12B2XUMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$2.65 / Stück
Datenblatt ansehen →2EP130RXTMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1.2 / Stück
Datenblatt ansehen →1ED3124MC12HXUMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1.45 / Stück
Datenblatt ansehen →2EDR7259XXUMA1 Grenzwerte & elektrische Eigenschaften
| Product Type | Isolated Gate Driver IC |
| Topologie | Dual-channel, half-bridge independent outputs |
| Isolation Technology | Magnetic (coreless transformer) coupling |
| Number of Channels | 2 |
| Peak Source Current (typ.) | 5 A |
| Peak Sink Current (typ.) | 9 A |
| Isolation Voltage (Vrms) | 5700 Vrms |
| Transient Withstanding Voltage | 8000 Vpk (per Infineon family datasheet) |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns |
| Propagation Delay (typ.) | 38 ns |
| UVLO | Yes, independent per channel |
| Logic Supply (VCC) | 3.3 V or 5 V |
| Betriebstemperaturbereich | -40 °C to +125 °C |
| Gehäuse | PG-DSO-14 (narrow body) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
2EDR7259XXUMA1 Pin-Konfiguration
| Pin 1 | VCC1 — Primary-side (low-voltage) logic supply, 3.3 V or 5 V |
| Pin 2 | GND1 — Primary-side ground reference |
| Pin 3 | INA — Channel A input driver signal (low-voltage side) |
| Pin 4 | INB — Channel B input driver signal (low-voltage side) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | GND2A — Channel A secondary-side (high-voltage) ground |
| Pin 7 | OUTA — Channel A gate-drive output to power switch |
| Pin 8 | VB — Channel B high-side bootstrap supply |
| Pin 9 | VS — Channel B high-side floating supply return (switch node) |
| Pin 10 | OUTB — Channel B gate-drive output (high-side) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | VCC2A — Channel A secondary-side supply (isolated) |
| Pin 13 | VCC2B — Channel B secondary-side supply (isolated) |
| Pin 14 | GND2B — Channel B secondary-side ground reference |
Typische Anwendungen
2EDR7259XXUMA1 ist geeignet für 7 Anwendungs: Industrial SMPS Half-Bridge Driver, Photovoltaic String Inverter, Industrial Servo Motor Drive, Welding Power Supply, EV On-Board Charger (OBC) PFC Stage, Solar Microinverter / Module-Level Converter, Uninterruptible Power Supply (UPS) Inverter.
Industrial SMPS Half-Bridge Driver
The 2EDR7259XXUMA1 drives the high-side and low-side IGBTs or MOSFETs of an isolated half-bridge in industrial switched-mode power supplies. Its 5700 Vrms reinforced isolation (IEC 60747-17 / VDE 0884-11) allows the control domain to operate safely on the mains side, while 5 A source / 9 A sink drive current handles 600 V-1200 V IGBTs up to 50 A. The 150 V/ns CMTI prevents false triggering from primary-side dv/dt, and the 38 ns propagation delay supports switching frequencies above 100 kHz for compact, high-density telecom and server SMPS designs.
Empfohlen
Photovoltaic String Inverter
In a PV string inverter the 2EDR7259XXUMA1 drives the IGBTs of the boost stage and the DC-AC inverter bridge. The 5700 Vrms reinforced isolation allows the control MCU to interface with 600 V-1200 V DC bus while maintaining safety certification, and the 150 V/ns CMTI rejects the high dv/dt of PWM switching without injecting false triggers. The 5 A/9 A drive profile is well matched to mid-power 600 V trench-gate IGBTs in the 30-50 A class commonly used in residential and commercial string inverters.
Empfohlen
Industrial Servo Motor Drive
The 2EDR7259XXUMA1 drives the three-phase IGBT inverter of an industrial servo drive, providing reinforced isolation between the control board and the 600 V-800 V DC bus. Its 5 A source / 9 A sink output drives 50 A-class IGBT modules with sub-50 ns propagation delay, enabling the high PWM frequencies (16-32 kHz) needed for low acoustic noise and high servo bandwidth. The independent per-channel UVLO protects both high-side and low-side switches from insufficient gate voltage during low-line or cold-start conditions.
Empfohlen
Welding Power Supply
In welding inverter power supplies the 2EDR7259XXUMA1 drives the primary-side IGBTs of the resonant converter that produces the welding arc current. The reinforced 5700 Vrms isolation is essential for safety certification of the high-power arc stage, while 150 V/ns CMTI allows reliable operation at the high dv/dt of resonant transitions. The 9 A peak sink current handles the Miller plateau discharge during IGBT turn-off at arc-strike load steps, preventing dv/dt-induced shoot-through in the half-bridge.
Empfohlen
EV On-Board Charger (OBC) PFC Stage
The 2EDR7259XXUMA1 drives the IGBTs of the bridgeless totem-pole PFC stage in an 11 kW-22 kW EV on-board charger. Its reinforced isolation and high CMTI support the 600 V-800 V DC bus common in 400 V and 800 V EV architectures, and the 38 ns propagation delay keeps PWM distortion low at 50-100 kHz switching frequencies. The PG-DSO-14 narrow-body package fits the compact magnetics-dense layout of OBC modules, and the -40 °C to +125 °C operating range covers under-hood thermal extremes.
Empfohlen
Solar Microinverter / Module-Level Converter
For module-level solar microinverters and DCDC optimizers, the 2EDR7259XXUMA1 provides the reinforced-isolated gate drive for the high-frequency transformer-linked full-bridge stage. Its 5700 Vrms isolation is required by safety standards for PV systems where the inverter output can float at high voltage relative to protective earth. The 5 A source / 9 A sink drive handles 600 V Si MOSFETs in the 10-30 A class typically used in 250 W-600 W microinverter modules, with the 150 V/ns CMTI ensuring clean switching at high frequency.
Empfohlen
Uninterruptible Power Supply (UPS) Inverter
In a double-conversion UPS the 2EDR7259XXUMA1 drives the IGBT inverter stage that converts the 384 V-480 V DC bus to 230 V/400 V AC output. The reinforced isolation enables safe control interfacing across the battery-side and AC-side domains, and the 150 V/ns CMTI supports the high switching slew rates required for low-THD sinusoidal output. The 9 A peak sink current ensures reliable IGBT turn-off during step load transients when the Miller current spike is highest.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für 2EDR7259XXUMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | 2EDB7259KXUMA1 | 2EDR8258XXUMA1 | 1ED020I12B2XUMA1 | 2EP130RXTMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-DSO-14 (narrow body) | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Channel Count | 2 (independent half-bridge) | 2 | 2 | 1 | 2 (non-isolated) | 1 |
| Isolation Voltage (Vrms) | 5700 Vrms reinforced | 3000 Vrms basic | 5700 Vrms reinforced | 1200 V basic (different class) | 0 V (non-isolated) | 1200 V basic |
| CMTI | 150 V/ns | 150 V/ns | 200 V/ns | 50 V/ns | N/A (non-isolated) | 100 V/ns |
| Recommended Switch Technology | Si MOSFET / IGBT (up to 1200 V) | Si MOSFET / IGBT | SiC-optimized | IGBT up to 1200 V | Si MOSFET low-side only | SiC MOSFET up to 1200 V |
| Pinout Compatible | Reference | Yes - direct drop-in | Yes - direct drop-in | Yes - same package | Yes - same package, different function | Yes - same package |
Wichtigste Unterscheidungsmerkmale
- Highest CMTI in its drive-current class at 150 V/ns (vs. 2EDB7259KXUMA1)
- Optimized 5 A source / 9 A sink drive asymmetry for IGBT turn-off (vs. 2EDR8258XXUMA1)
- Dual independent channels with per-channel UVLO in PG-DSO-14 (vs. 1ED020I12B2XUMA1)
- Reinforced isolation IEC 60747-17 / VDE 0884-11 certified (vs. 2EP130RXTMA1)
Designhinweise
The 2EDR7259XXUMA1 requires two isolated supplies: a primary-side 3.3 V or 5 V VCC1 for the low-voltage logic domain, and two secondary-side VCC2A / VCC2B supplies (one per channel) for the gate-drive rails. For the high-side channel use a bootstrap circuit (diode + capacitor) referenced to VS, or an isolated DC-DC converter for continuous duty-cycle applications above ~95% modulation. Estimated: at 100 kHz switching with 100 nC gate charge, the secondary-side supply draws approximately 10 mA per channel - size the bootstrap capacitor for at least 10x this charge per switching cycle to limit voltage droop.
Minimize the gate-drive loop inductance by placing the gate-drive resistor and return path directly adjacent to the OUTx and GND2x pins. Keep the gate-drive traces short and wide (50-100 mils) on the top layer, and place a local gate-emitter/source capacitor (at least 1uF ceramic) directly across each power switch to limit the high-frequency ringing during turn-off. The PG-DSO-14 package requires a keep-out zone under the driver body to maintain the >8 mm creepage distance for reinforced isolation - do not route any traces under the package.
The PG-DSO-14 package has a thermal resistance of approximately 75-100 C/W depending on PCB copper area. With 5 A/9 A peak drive at 100 kHz and 100 nC gate charge, the average gate-drive dissipation is approximately 0.3-0.5 W per channel - well within the package rating. However, if the driver is operated near its peak output current continuously (e.g., during a fault), the SOA of the output stage must be observed. Provide adequate copper pour (at least 100 mm²) on the secondary-side ground pins to spread heat into the inner PCB layers.
Do not exceed the maximum VCC2 supply voltage (typically 20-25 V depending on datasheet revision) - overvoltage on the secondary-side supply will damage the gate-drive output stage. The bootstrap supply must be recharged every switching cycle - duty cycles above ~95% require an isolated DC-DC converter instead of a bootstrap. Verify the UVLO thresholds match your MOSFET/IGBT gate-drive requirements: insufficient VCC2 at start-up can prevent the power stage from switching cleanly. Avoid routing high-dv/dt signals (the switched node VS) near the primary-side logic pins to prevent CMTI-induced false triggering.
The input logic pins (INA, INB) are referenced to the primary-side ground (GND1) and accept 3.3 V or 5 V CMOS logic. Place a 100 nF decoupling capacitor close to VCC1 and a small ferrite bead if the primary-side supply is noisy. The propagation delay of 38 ns is typical; the channel-to-channel delay match is critical for half-bridge timing - a 10 ns mismatch at 100 kHz equals 1% duty-cycle error, which can cause thermal imbalance in the power stage. Always reference the manufacturer datasheet timing specifications rather than relying on the typical value alone.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. Reinforced isolation certified to IEC 60747-17 / VDE 0884-11. Not AEC-Q100 qualified; for automotive isolated gate drive refer to Infineon's automotive-grade EiceDRIVER catalog. Halogen-free per JEDEC JS709B.
