2N7002LT1G vs MMBF170LT1 Vergleich
Detaillierter Direktvergleich von 2N7002LT1G von onsemi und MMBF170LT1 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002LT1G | MMBF170LT1 |
|---|---|---|
| Marke | onsemi | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,09 |
| Polarity | N-Channel | N-Channel |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| Gehäuse | SOT-23-3 (TO-236) | — |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Kategorie | Small Signal MOSFET | — |
| Technology | MOSFET | DMOS |
| Manufacturer | onsemi (ON Semiconductor) | onsemi (ON Semiconductor) |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C (TJ max per datasheet) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Part Number | — | MMBF170LT1 |
| Transistortyp | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDSS) | — | 60 V |
| Drain-Gate Voltage (VDGS) | — | 60 Vdc |
| Gate-Source Voltage - Continuous (VGS) | — | ±20 Vdc (per datasheet) |
| Gate-Source Voltage - Non-repetitive (VGSM) | — | ±40 Vpk (tp <= 50 ms) |
| Continuous Drain Current (ID) | — | 500 mA (Ta) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Total Device Dissipation (PD) | — | 225 mW (Ta, FR-5 board) |
| Gehäuse / Bauform | — | SOT-23-3 (TO-236) |
| Pin-Anzahl | — | 3 |
| RoHS-Status | — | Compliant (per onsemi product page) |
| AEC-Q101 Qualified | — | Yes (per datasheet) |