6EDL04I065PRXUMA1 vs 1ED020I12B2XUMA1 Vergleich
Detaillierter Direktvergleich von 6EDL04I065PRXUMA1 von Infineon und 1ED020I12B2XUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon
1ED020I12B2XUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 6EDL04I065PRXUMA1 | 1ED020I12B2XUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,65 | $2,65 |
| Product Type | Three-Phase Gate Driver IC | — |
| Topologie | Half-Bridge, 3-phase (6 outputs) | — |
| Blocking Voltage | 650 V | — |
| Ausgangskonfiguration | 6 outputs (3 high-side + 3 low-side) | — |
| Logic Inputs | Non-Inverting | — |
| Source Current (typ.) | 0.24 A | — |
| Sink Current (typ.) | 0.5 A | — |
| Logic Supply Voltage (VCC) | 3.3 V to 5 V (typ. 5 V) | — |
| High-Side Floating Supply Voltage (VB) | up to 650 V (offset) | — |
| Bootstrap Diodes | Integrated (3x) | — |
| Over-Current Protection (OCP) | Yes | — |
| Under-Voltage Lockout (UVLO) | Yes (per channel) | — |
| Fault Output | Yes (open-drain / active-low) | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay] | 35 ns |
| Betriebs-Sperrschichttemperatur | -40 C to +125 C | — |
| Gehäuse | PG-TSSOP-25 | PG-DSO-16-15 (300 mil wide-body DSO-16) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 2 (per JEDEC J-STD-020) | MSL-3 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | — |
| Driver Type | — | Single-channel IGBT gate driver, galvanically isolated |
| Isolation Technology | — | Coreless transformer (magnetic coupling) |
| Isolation Voltage (Vrms) | — | 4500 Vrms |
| Number of Channels | — | 1 |
| Output Current (typ.) | — | 2 A source / 2 A sink |
| Supported Switch Voltage Class | — | Up to 1200 V IGBT / SiC MOSFET |
| DESAT Protection | — | Yes (programmable threshold) |
| Miller Clamp | — | Yes (integrated 2 A clamp FET) |
| Input Supply (VCC1) | — | 5 V (logic side) |
| Output Supply (VCC2) | — | Unipolar 15 V or bipolar -8.5 V / 15 V |
| Creepage Distance | — | 8 mm |
| Betriebstemperatur | — | -40 °C to +125 °C |
| Compliance | — | RoHS compliant |