6EDL04N02PRXUMA1 vs 6EDL04I065PRXUMA1 Vergleich

Detaillierter Direktvergleich von 6EDL04N02PRXUMA1 von Infineon und 6EDL04I065PRXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Aktiv
Infineon
6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter 6EDL04N02PRXUMA1 6EDL04I065PRXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,32 $2,65
Product Type 3-Phase Gate Driver IC Three-Phase Gate Driver IC
Driver Configuration Half-bridge (3 high-side + 3 low-side) —
Maximum Blocking Voltage +180 V (VS referenced to GND for high side) —
Rated Supply Voltage (VCC) 200 V class (operating range 10 V to 20 V on VCC) —
Source Current (typ.) 0.375 A 0.24 A
Sink Current (typ.) 0.75 A 0.5 A
Bootstrap Diode Integrated (BSD) on all 3 high-side drivers —
Over-Current Protection Yes (single-shunt, ITRIP/CIN pin) —
Enable Pin (EN) Yes (active-high) —
Fault Output (nFAULT) Yes (active-low, open-drain) —
Input Logic Compatibility CMOS / LSTTL, 3.3 V and 5 V —
Interlocking / Anti-shoot-through Yes (built-in per phase pair) —
Process Technology Thin-film SOI (Silicon-On-Insulator) —
Betriebstemperaturbereich -40 °C to +125 °C —
Maximum Junction Temperature +150 °C —
Gehäuse PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) PG-TSSOP-25
Montageart Surface Mount Surface Mount
Target Switches MOSFETs up to 180 V, IGBTs up to 180 V —
MSL-Level MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) 2 (per JEDEC J-STD-020)
RoHS-Status Compliant Compliant
Topologie — Half-Bridge, 3-phase (6 outputs)
Blocking Voltage — 650 V
Ausgangskonfiguration — 6 outputs (3 high-side + 3 low-side)
Logic Inputs — Non-Inverting
Logic Supply Voltage (VCC) — 3.3 V to 5 V (typ. 5 V)
High-Side Floating Supply Voltage (VB) — up to 650 V (offset)
Bootstrap Diodes — Integrated (3x)
Over-Current Protection (OCP) — Yes
Under-Voltage Lockout (UVLO) — Yes (per channel)
Fault Output — Yes (open-drain / active-low)
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay]
Betriebs-Sperrschichttemperatur — -40 C to +125 C

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