6EDL04N02PRXUMA1 vs 6EDL04I065PRXUMA1 Comparación

Comparación detallada lado a lado de 6EDL04N02PRXUMA1 por Infineon y 6EDL04I065PRXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Activo
Infineon
6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 ✓ Activo

Comparación de especificaciones

Parámetro 6EDL04N02PRXUMA1 6EDL04I065PRXUMA1
Marca Infineon Infineon
Categoría Power MOSFET Drivers Power MOSFET Drivers
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $2,32 $2,65
Product Type 3-Phase Gate Driver IC Three-Phase Gate Driver IC
Driver Configuration Half-bridge (3 high-side + 3 low-side) —
Maximum Blocking Voltage +180 V (VS referenced to GND for high side) —
Rated Supply Voltage (VCC) 200 V class (operating range 10 V to 20 V on VCC) —
Source Current (typ.) 0.375 A 0.24 A
Sink Current (typ.) 0.75 A 0.5 A
Bootstrap Diode Integrated (BSD) on all 3 high-side drivers —
Over-Current Protection Yes (single-shunt, ITRIP/CIN pin) —
Enable Pin (EN) Yes (active-high) —
Fault Output (nFAULT) Yes (active-low, open-drain) —
Input Logic Compatibility CMOS / LSTTL, 3.3 V and 5 V —
Interlocking / Anti-shoot-through Yes (built-in per phase pair) —
Process Technology Thin-film SOI (Silicon-On-Insulator) —
Rango de temperatura de funcionamiento -40 °C to +125 °C —
Maximum Junction Temperature +150 °C —
Encapsulado PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) PG-TSSOP-25
Tipo de montaje Surface Mount Surface Mount
Target Switches MOSFETs up to 180 V, IGBTs up to 180 V —
Nivel MSL MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) 2 (per JEDEC J-STD-020)
Estado RoHS Compliant Compliant
Topología — Half-Bridge, 3-phase (6 outputs)
Blocking Voltage — 650 V
Configuración de salida — 6 outputs (3 high-side + 3 low-side)
Logic Inputs — Non-Inverting
Logic Supply Voltage (VCC) — 3.3 V to 5 V (typ. 5 V)
High-Side Floating Supply Voltage (VB) — up to 650 V (offset)
Bootstrap Diodes — Integrated (3x)
Over-Current Protection (OCP) — Yes
Under-Voltage Lockout (UVLO) — Yes (per channel)
Fault Output — Yes (open-drain / active-low)
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay]
Temperatura de unión de funcionamiento — -40 C to +125 C

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