ATSAMG53N19A-AU vs ATSAMG55J19A-AU Vergleich
Detaillierter Direktvergleich von ATSAMG53N19A-AU von Microchip Technology und ATSAMG55J19A-AU von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip
ATSAMG55J19A-AU ✓ AktivSpezifikationsvergleich
| Parameter | ATSAMG53N19A-AU | ATSAMG55J19A-AU |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | Microcontrollers | Microcontrollers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $3,99 |
| Core Architecture | ARM Cortex-M4 with FPU | ARM Cortex-M4 with FPU |
| Core Clock Speed | 48 MHz | — |
| Bit Width | 32-bit | — |
| Program Memory (Flash) | 512 KB (512K x 8) | — |
| RAM | 96 KB | — |
| Versorgungsspannung | 1.5 V to 3.6 V | — |
| Betriebstemperatur | -40 C to +85 C (Industrial) | -40 C to +85 C (industrial) |
| Gehäuse | LQFP-100 (14x14 mm) | 64-LQFP (10x10 mm) |
| GPIO Count | Up to 38 | — |
| ADC | 12-bit, up to 1 MSPS | 12-bit SAR |
| USB | USB 2.0 Full-Speed device with on-chip transceiver | USB 2.0 Full-Speed device/host |
| Communication Peripherals | USART/UART/SPI/TWI/I2C | USART/UART, SPI, TWI (I2C), I2S, HS USB |
| Oscillator | Internal 8 MHz, external 32.768 kHz RTC crystal support | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 3 (per industry standard) | — |
| RoHS-Status | Compliant | Compliant |
| Core Clock Speed (max) | — | 120 MHz |
| Instruction Set | — | 32-bit RISC + DSP extensions + FPU (single-precision) |
| Program Flash Memory | — | 512 KB (512K x 8) |
| SRAM (Total) | — | 160 KB |
| Backup SRAM with Retention | — | 16 KB (retained in deep sleep) |
| Supply Voltage (VDDIO/VDDCORE) | — | 1.62 V to 3.6 V |
| Audio Interface | — | I2S with PDM/TDM and sample-rate converter |
| External Bus Interface (EBI) | — | Yes (for SRAM/SDRAM/NOR Flash expansion) |
| Active Power Consumption | — | Down to 100 uA/MHz |
| Deep Sleep Current | — | Below 7 uA with SRAM retention |
| Wake-up Time (deep sleep to first instruction) | — | Down to 3 us |
| Lifecycle / New Design Recommendation | — | Active (new designs: consider ATSAMG55J19B Revision B) |