BFU520AVL vs BFU520R Vergleich
Detaillierter Direktvergleich von BFU520AVL von NXP Semiconductors und BFU520R von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BFU520AVL | BFU520R |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,18 |
| Transistortyp | NPN wideband silicon RF transistor | NPN wideband silicon RF BJT |
| Polarity | NPN | — |
| Configuration | Single | Single NPN, dual-emitter |
| Kollektor-Emitter-Spannung (Vceo) | 12 V | 12 V |
| Collector Current (IC max) | 30 mA (DigiKey listing); 50 mA per Vyrian listing | 30 mA |
| Übergangsfrequenz (ft) | up to 10 GHz | 10.5 GHz |
| Power Dissipation (Pd) | 450 mW | — |
| Application Band | up to 2 GHz (BFU5 family rating) | — |
| Gehäuse | SOT-23 (TO-236AB), 3-pin | SOT-143B (4-pin, dual-emitter, plastic) |
| Montageart | Surface Mount | Surface Mount |
| Peak Reflow Temperature | 260 C | — |
| Noise Figure | [DATA_NEEDED: noise figure] | [DATA_NEEDED: noise figure in dB] |
| Gain (S21) | [DATA_NEEDED: gain] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | RoHS compliant (per supplier listing) | [DATA_NEEDED: RoHS status] |
| Packaging Suffix | VL (Tape & Reel) | — |
| Total Power Dissipation | — | 450 mW |
| Frequency Range | — | up to 2 GHz application range |
| Noise Performance | — | Low noise, high breakdown |
| Automotive Qualification | — | AEC-Q101 qualified |
| Family | — | BFU5 (BFU5x wideband silicon RF transistors) |
| Application Class | — | Small signal to medium power |
| Gain | — | [DATA_NEEDED: gain] |