BFU520AVL vs BFU520R Comparaison
Comparaison détaillée côte à côte de BFU520AVL par NXP Semiconductors et BFU520R par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BFU520AVL | BFU520R |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Transistors | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,21 | $0,18 |
| Type de transistor | NPN wideband silicon RF transistor | NPN wideband silicon RF BJT |
| Polarity | NPN | — |
| Configuration | Single | Single NPN, dual-emitter |
| Tension collecteur-émetteur (Vceo) | 12 V | 12 V |
| Collector Current (IC max) | 30 mA (DigiKey listing); 50 mA per Vyrian listing | 30 mA |
| Fréquence de transition (ft) | up to 10 GHz | 10.5 GHz |
| Power Dissipation (Pd) | 450 mW | — |
| Application Band | up to 2 GHz (BFU5 family rating) | — |
| Boîtier | SOT-23 (TO-236AB), 3-pin | SOT-143B (4-pin, dual-emitter, plastic) |
| Type de montage | Surface Mount | Surface Mount |
| Peak Reflow Temperature | 260 C | — |
| Noise Figure | [DATA_NEEDED: noise figure] | [DATA_NEEDED: noise figure in dB] |
| Gain (S21) | [DATA_NEEDED: gain] | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Statut RoHS | RoHS compliant (per supplier listing) | [DATA_NEEDED: RoHS status] |
| Packaging Suffix | VL (Tape & Reel) | — |
| Total Power Dissipation | — | 450 mW |
| Frequency Range | — | up to 2 GHz application range |
| Noise Performance | — | Low noise, high breakdown |
| Automotive Qualification | — | AEC-Q101 qualified |
| Family | — | BFU5 (BFU5x wideband silicon RF transistors) |
| Application Class | — | Small signal to medium power |
| Gain | — | [DATA_NEEDED: gain] |