BSC014N04LSIATMA1 vs BSC014N04LSATMA1 Vergleich
Detaillierter Direktvergleich von BSC014N04LSIATMA1 von Infineon und BSC014N04LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC014N04LSIATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,74 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench, thin-wafer) | Trench (OptiMOS 5, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | 20 V |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Power Dissipation (PD, Ta) | 2.5 W | — |
| Betriebstemperaturbereich | -55 C to +150 C | -55C to +175C |
| Gehäuse | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Tradename | OptiMOS | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |