BSC014N04LSIATMA1 vs BSC014N04LSATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LSIATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSIATMA1

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 βœ“ Active
Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LSIATMA1 BSC014N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.74
FET Type N-Channel β€”
Technology OptiMOS 5 (trench, thin-wafer) Trench (OptiMOS 5, thin-wafer)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 100 A β€”
Continuous Drain Current (ID, Ta) 31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] β€”
RDS(on) max at VGS=10 V 1.4 mOhm 1.4 mOhm
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum] 20 V
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] β€”
Power Dissipation (PD, Tc) 96 W β€”
Power Dissipation (PD, Ta) 2.5 W β€”
Operating Temperature Range -55 C to +150 C -55C to +175C
Package PG-TDSON-8 FL (TDSON-8 with exposed drain pad) SuperSO8 (TDSON-8 FL) 5x6 mm
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS Status Compliant Compliant
Tradename OptiMOS β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 32 A
Continuous Drain Current (ID) at Tc β€” 100 A
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 96 W

Datasheets & Resources

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