BSC014NE2LSIATMA1 vs BSZ0901NSIATMA1 Vergleich
Detaillierter Direktvergleich von BSC014NE2LSIATMA1 von Infineon und BSZ0901NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC014NE2LSIATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,34 |
| Technology | N-Channel MOSFET (OptiMOS 25V) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Ta) | 33 A | — |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 74 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C | — |
| Gehäuse | PG-TDSON-8-7 (SuperSO8) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Pin-Anzahl | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Betriebstemperaturbereich | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |