BSC016N06NSATMA1 vs BSC014N06NSATMA1 Vergleich
Detaillierter Direktvergleich von BSC016N06NSATMA1 von Infineon und BSC014N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC016N06NSATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, TA) | 30 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 139 W | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | -55C to +150C |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | 1 |
| RoHS-Status | Compliant | Compliant |
| Gate Drive (recommended) | 10 V | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 (shielded-gate trench) |
| Product Family | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |