BSC016N06NSTATMA1 vs BSC014NE2LSIATMA1 Vergleich
Detaillierter Direktvergleich von BSC016N06NSTATMA1 von Infineon und BSC014NE2LSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC016N06NSTATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC016N06NSTATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | N-Channel MOSFET (OptiMOS 25V) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 31 A | — |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | — |
| Power Dissipation (Tc) | 167 W | 74 W |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C | — |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Series | OptiMOS | — |
| Drain-Source Voltage (VDS) | — | 25 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +150 °C |