BSC016N06NSTATMA1 vs BSC014NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC016N06NSTATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC016N06NSTATMA1
BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
BSC016N06NSTATMA1 β ActiveInfineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC016N06NSTATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC016N06NSTATMA1 | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 | N-Channel MOSFET (OptiMOS 25V) |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Ta=25C) | 31 A | β |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | β |
| Power Dissipation (Tc) | 167 W | 74 W |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Series | OptiMOS | β |
| Drain-Source Voltage (VDS) | β | 25 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 33 A |
| Continuous Drain Current (ID, Tc) | β | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | β | 100 A |
| On-State Resistance RDS(on) | β | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ at VGS=10V] |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |