BSC018NE2LSATMA1 vs BSC019N04LSTATMA1 Vergleich
Detaillierter Direktvergleich von BSC018NE2LSATMA1 von Infineon und BSC019N04LSTATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC018NE2LSATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,21 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 29 A | — |
| On-Resistance RDS(on) @ VGS=10V | 1.8 mΩ (typical) | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Charge (Qg) | 39 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 2800 pF @ VDS=12V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Betriebstemperaturbereich | -55°C to +150°C (TJ) | -55 C to +150 C |
| Gehäuse | PG-TDSON-8-1 (8-PowerTDFN) | TDSON-8 (SuperSO8) 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 25V (Trench) | OptiMOS 5 (N-channel trench MOSFET) |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |