BSC021N08NS5ATMA1 vs BSZ060NE2LSATMA1 Vergleich
Detaillierter Direktvergleich von BSC021N08NS5ATMA1 von Infineon und BSZ060NE2LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC021N08NS5ATMA1 | BSZ060NE2LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,81 | $0,27 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 | BSZ060NE2LSATMA1 |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tc=25°C) | 226 A | — |
| Continuous Drain Current (I_D, Tc=100°C) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΩ | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| Power Dissipation P_D (Tc=25°C) | 214 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | SuperSO8 5x6 (PG-TSON-8-3) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | — |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | — |
| RoHS-Status | Compliant (Pb-free) | Compliant |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Delivery Form | Tape & Reel (T&R) | — |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) @ Ta=25C | — | 12 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 44 A |
| Pulsed Drain Current (IDM) | — | 44 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 6 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 26 W |
| Betriebstemperaturbereich | — | -55C to +150C |
| Shipping Packaging | — | Tape & Reel |